Infineon 4 V 110 mA Diode TSLP

This image is representative of the product range

View this category
Bulk discount available

Subtotal (1 reel of 15000 units)*

PHP220,680.00

(exc. VAT)

PHP247,155.00

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from May 08, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per Unit
Per Reel*
15000 - 15000PHP14.712PHP220,680.00
30000 - 30000PHP14.271PHP214,065.00
45000 +PHP13.70PHP205,500.00

*price indicative

RS Stock No.:
258-0636
Mfr. Part No.:
BAT1502ELE6327XTMA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Mount Type

Surface

Product Type

Diode

Package Type

TSLP

Maximum Continuous Forward Current If

110mA

Peak Reverse Repetitive Voltage Vrrm

4V

Diode Configuration

Single

Series

BAT15-02EL

Peak Reverse Current Ir

5μA

Maximum Forward Voltage Vf

0.41V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

JEDEC47/20/22

Automotive Standard

No

The Infineon RF Schottky diode is a silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage and low junction capacitance make BAT15-02EL a suitable choice for mixer and detector functions in applications which frequencies are as high as 12 GHz.

TSLP-2-19 package with a 0402 foot print

Pb-free, RoHS compliant and halogen-free

Related links