Infineon 4 V 110 mA Diode Schottky 2-Pin SOD-323 BAT1503WE6327HTSA1
- RS Stock No.:
- 261-3915
- Mfr. Part No.:
- BAT1503WE6327HTSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 20 units)*
PHP476.28
(exc. VAT)
PHP533.44
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- Plus 440 unit(s) shipping from March 02, 2026
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Units | Per Unit | Per Pack* |
|---|---|---|
| 20 - 20 | PHP23.814 | PHP476.28 |
| 40 - 80 | PHP21.391 | PHP427.82 |
| 100 - 220 | PHP19.252 | PHP385.04 |
| 240 - 480 | PHP17.35 | PHP347.00 |
| 500 + | PHP15.591 | PHP311.82 |
*price indicative
- RS Stock No.:
- 261-3915
- Mfr. Part No.:
- BAT1503WE6327HTSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | Diode | |
| Mount Type | Surface | |
| Package Type | SOD-323 | |
| Maximum Continuous Forward Current If | 110mA | |
| Peak Reverse Repetitive Voltage Vrrm | 4V | |
| Diode Configuration | Single | |
| Series | BAT15-03W | |
| Rectifier Type | Schottky | |
| Pin Count | 2 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Forward Voltage Vf | 0.32V | |
| Peak Reverse Current Ir | 5μA | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.5mm | |
| Width | 1.25 mm | |
| Height | 0.9mm | |
| Standards/Approvals | JEDEC47/20/22 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type Diode | ||
Mount Type Surface | ||
Package Type SOD-323 | ||
Maximum Continuous Forward Current If 110mA | ||
Peak Reverse Repetitive Voltage Vrrm 4V | ||
Diode Configuration Single | ||
Series BAT15-03W | ||
Rectifier Type Schottky | ||
Pin Count 2 | ||
Minimum Operating Temperature -55°C | ||
Maximum Forward Voltage Vf 0.32V | ||
Peak Reverse Current Ir 5μA | ||
Maximum Operating Temperature 150°C | ||
Length 2.5mm | ||
Width 1.25 mm | ||
Height 0.9mm | ||
Standards/Approvals JEDEC47/20/22 | ||
Automotive Standard No | ||
The Infineon RF Schottky diode is a silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage and low junction capacitance make a suitable choice for mixer and detector functions in applications which frequencies are as high as 12 GHz.
RoHS compliant and halogen-free
Low capacitance and inductance
Related links
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