Infineon 4 V 110 mA Diode Schottky 4-Pin SOT-143 BAT15099E6327HTSA1
- RS Stock No.:
- 261-3920
- Distrelec Article No.:
- 304-41-634
- Mfr. Part No.:
- BAT15099E6327HTSA1
- Manufacturer:
- Infineon
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Units | Per Unit | Per Pack* | Saving |
|---|---|---|---|
| 15 - 15 | PHP21.639 | PHP324.59 | - |
| 30 - 75 | PHP19.483 | PHP292.25 | PHP64.68 |
| 90 - 225 | PHP17.534 | PHP263.01 | PHP369.45 |
| 240 - 465 | PHP15.751 | PHP236.27 | PHP1,413.12 |
| 480 + | PHP14.177 | PHP212.66 | PHP3,581.76 |
*price indicative
- RS Stock No.:
- 261-3920
- Distrelec Article No.:
- 304-41-634
- Mfr. Part No.:
- BAT15099E6327HTSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | Diode | |
| Mount Type | Surface | |
| Package Type | SOT-143 | |
| Maximum Continuous Forward Current If | 110mA | |
| Peak Reverse Repetitive Voltage Vrrm | 4V | |
| Series | BAT15-099 | |
| Diode Configuration | Anti-Parallel Pair | |
| Rectifier Type | Schottky | |
| Pin Count | 4 | |
| Peak Reverse Current Ir | 5μA | |
| Maximum Forward Voltage Vf | 410mV | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 2.4mm | |
| Length | 2.9mm | |
| Width | 1mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type Diode | ||
Mount Type Surface | ||
Package Type SOT-143 | ||
Maximum Continuous Forward Current If 110mA | ||
Peak Reverse Repetitive Voltage Vrrm 4V | ||
Series BAT15-099 | ||
Diode Configuration Anti-Parallel Pair | ||
Rectifier Type Schottky | ||
Pin Count 4 | ||
Peak Reverse Current Ir 5μA | ||
Maximum Forward Voltage Vf 410mV | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 2.4mm | ||
Length 2.9mm | ||
Width 1mm | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon RF Schottky diodes are silicon low barrier N-type devices with an integrated guard ring on-chip for over-voltage protection. Their low barrier height, low forward voltage and low junction capacitance make a suitable choice for mixer and detector functions in applications which frequencies are as high as 12 GHz.
RoHS compliant and halogen-free
Low capacitance and inductance
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