Vishay SUM110P06-08L Type P-Channel MOSFET, 110 A, 60 V Enhancement, 3-Pin TO-263
- RS Stock No.:
- 919-0922
- Mfr. Part No.:
- SUM110P06-08L-E3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 800 units)*
PHP139,865.60
(exc. VAT)
PHP156,649.60
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- Shipping from February 08, 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Reel* |
|---|---|---|
| 800 - 800 | PHP174.832 | PHP139,865.60 |
| 1600 - 1600 | PHP171.469 | PHP137,175.20 |
| 2400 - 4000 | PHP168.107 | PHP134,485.60 |
| 4800 - 6400 | PHP164.746 | PHP131,796.80 |
| 7200 + | PHP161.57 | PHP129,256.00 |
*price indicative
- RS Stock No.:
- 919-0922
- Mfr. Part No.:
- SUM110P06-08L-E3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 110A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-263 | |
| Series | SUM110P06-08L | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 8mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.5V | |
| Maximum Power Dissipation Pd | 3.75W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 160nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 9.65 mm | |
| Height | 4.83mm | |
| Length | 10.41mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 110A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-263 | ||
Series SUM110P06-08L | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 8mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.5V | ||
Maximum Power Dissipation Pd 3.75W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 160nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 9.65 mm | ||
Height 4.83mm | ||
Length 10.41mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Related links
- Vishay SUM110P06-08L Type P-Channel MOSFET 60 V Enhancement, 3-Pin TO-263 SUM110P06-08L-E3
- Vishay Type P-Channel MOSFET 60 V Enhancement, 3-Pin TO-263
- Vishay Type P-Channel MOSFET 60 V Enhancement, 3-Pin TO-263 SUM110P06-07L-E3
- Vishay Type P-Channel Power MOSFET 80 V, 3-Pin TO-263
- Vishay SUM55P06-19L Type P-Channel MOSFET 60 V Enhancement, 3-Pin TO-263
- Vishay Type P-Channel Power MOSFET 80 V, 3-Pin TO-263 SUM110P08-11L-E3
- Vishay Type P-Channel MOSFET 100 V, 3-Pin TO-263
- Vishay TrenchFET Type P-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23