Infineon HEXFET Type P-Channel MOSFET, 70 A, 55 V Enhancement, 3-Pin TO-263 IRF4905STRLPBF

RS Stock No.:: 831-2819
Mfr. Part No.:: IRF4905STRLPBF
Manufacturer:: Infineon

Infineon HEXFET Type P-Channel MOSFET, 70 A, 55 V Enhancement, 3-Pin TO-263 IRF4905STRLPBF

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PHP909.44

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PHP1,018.575

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In Stock

195 unit(s) ready to ship from another location
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Units	Per Unit	Per Pack*
5 - 20	PHP181.888	PHP909.44
25 - 95	PHP176.432	PHP882.16
100 - 245	PHP171.142	PHP855.71
250 - 495	PHP166.006	PHP830.03
500 +	PHP161.026	PHP805.13

*price indicative

RS Stock No.:: 831-2819
Mfr. Part No.:: IRF4905STRLPBF
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	70A
	Maximum Drain Source Voltage Vds	55V
	Package Type	TO-263
	Series	HEXFET
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	20mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	170W
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	120nC
	Forward Voltage Vf	-1.3V
	Maximum Operating Temperature	150°C
	Height	4.83mm
	Length	10.67mm
	Width	9.65 mm
	Standards/Approvals	No
	Automotive Standard	No
	Distrelec Product Id	304-44-444

	Select all
	Brand Infineon
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 70A
	Maximum Drain Source Voltage Vds 55V
	Package Type TO-263
	Series HEXFET
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 20mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 170W
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 120nC
	Forward Voltage Vf -1.3V
	Maximum Operating Temperature 150°C
	Height 4.83mm
	Length 10.67mm
	Width 9.65 mm
	Standards/Approvals No
	Automotive Standard No
	Distrelec Product Id 304-44-444

Infineon HEXFET Series MOSFET, 70A Maximum Continuous Drain Current, 170W Maximum Power Dissipation - IRF4905STRLPBF

This high current MOSFET is suitable for various applications within automation and electronics. With a maximum continuous drain current of 70A, it operates at drain-source voltages up to 55V. Its enhancement mode configuration meets performance requirements, while its low RDS(on) maximises energy efficiency. Designed for high power applications, this MOSFET offers thermal stability, making it appropriate for rigorous operating conditions.

Features & Benefits

• Improves system efficiency through low on-resistance values

• Functions effectively within a temperature range of -55°C to +150°C

• Supports fast switching speeds to enhance performance

• Features robust design for repetitive avalanche conditions

• Provided in a D2PAK TO-263 package for straightforward surface mounting

Applications

• Used in power management systems and converters

• Appropriate for motor control requiring high efficiency

• Integrated into switching power supplies for enhanced performance

• Applicable in automotive environments needing dependable control

• Employed in industrial automation requiring substantial power handling

What is the maximum temperature this device can operate at?

The device has a maximum operating temperature of +150°C, ensuring stability under varying environmental conditions.

How does the low RDS(on) benefit circuit design?

Low RDS(on) minimises conduction losses, enhancing overall circuit efficiency and enabling cooler operation.

Can this component handle pulsed currents?

Yes, it is capable of managing pulsed drain currents up to 280 A, making it suitable for dynamic applications.

What are the key parameters for selecting compatible driving voltages?

The gate-to-source voltage should remain within the range of -20 V to +20 V to guarantee effective operation without risk of damage.

Is it suitable for high-frequency switching applications?

The device is designed for fast switching, making it suitable for high-frequency operational functions in electronic circuits.