Infineon HEXFET Type P-Channel MOSFET, 31 A, 55 V Enhancement, 3-Pin TO-263 IRF5305STRLPBF

RS Stock No.:: 831-2834
Mfr. Part No.:: IRF5305STRLPBF
Manufacturer:: Infineon

Infineon HEXFET Type P-Channel MOSFET, 31 A, 55 V Enhancement, 3-Pin TO-263 IRF5305STRLPBF

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PHP819.28

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PHP917.59

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In Stock

410 unit(s) ready to ship from another location
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Units	Per Unit	Per Pack*
10 - 10	PHP81.928	PHP819.28
20 - 40	PHP79.469	PHP794.69
50 - 90	PHP77.086	PHP770.86
100 - 190	PHP74.774	PHP747.74
200 +	PHP72.532	PHP725.32

*price indicative

RS Stock No.:: 831-2834
Mfr. Part No.:: IRF5305STRLPBF
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	31A
	Maximum Drain Source Voltage Vds	55V
	Package Type	TO-263
	Series	HEXFET
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	60mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	-1.3V
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	110W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	63nC
	Maximum Operating Temperature	175°C
	Height	4.83mm
	Standards/Approvals	No
	Length	10.67mm
	Width	9.65 mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 31A
	Maximum Drain Source Voltage Vds 55V
	Package Type TO-263
	Series HEXFET
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 60mΩ
	Channel Mode Enhancement
	Forward Voltage Vf -1.3V
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 110W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 63nC
	Maximum Operating Temperature 175°C
	Height 4.83mm
	Standards/Approvals No
	Length 10.67mm
	Width 9.65 mm
	Automotive Standard No

COO (Country of Origin):: CN

Infineon HEXFET Series MOSFET, 31A Maximum Continuous Drain Current, 110W Maximum Power Dissipation - IRF5305STRLPBF

This P-channel MOSFET is tailored for high-efficiency applications, delivering reliability and performance. It employs enhancement mode functionality, making it versatile for various electronic circuits. With robust specifications, it serves as a suitable option for automation and power management in electrical and mechanical environments.

Features & Benefits

• Maximum continuous drain current of 31A

• Maximum drain source voltage of 55V

• Surface mount configuration for seamless integration

• Maximum power dissipation capability of 110W for efficient operation

• Enhanced thermal performance with a maximum operating temperature of +175°C

• Low on-resistance of 60mΩ for improved efficiency

Applications

• For use with motor controls

• Suitable for power supply circuits

• Electronic switching

• Energy management solutions

What is the maximum gate threshold voltage?

The maximum gate threshold voltage is 4V, providing adequate control in circuit design.

How does the MOSFET handle heat?

It features a maximum power dissipation of 110W, enabling effective heat management in demanding applications.

Is this product compatible with surface mount designs?

Yes, it comes in a D2PAK package type designed specifically for surface mount applications.

What is the minimum operating temperature for functionality?

The device operates effectively at a minimum temperature of -55°C, ensuring versatility for various environments.

How does the on-resistance impact performance?

The low maximum drain source resistance of 60mΩ contributes to higher efficiency and performance in power delivery applications.