P-Channel MOSFET, 31 A, 55 V, 3-Pin D2PAK Infineon IRF5305STRLPBF

RS Stock No.:: 831-2834
Mfr. Part No.:: IRF5305STRLPBF
Manufacturer:: Infineon

P-Channel MOSFET, 31 A, 55 V, 3-Pin D2PAK Infineon IRF5305STRLPBF

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Subtotal (1 pack of 10 units)**

PHP685.43

(exc. VAT)

PHP767.68

(inc. VAT)

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Units	Per Unit	Per Pack**
10 - 10	PHP68.543	PHP685.43
20 - 40	PHP66.486	PHP664.86
50 - 90	PHP64.492	PHP644.92
100 - 190	PHP62.558	PHP625.58
200 +	PHP60.682	PHP606.82

**price indicative

RS Stock No.:: 831-2834
Mfr. Part No.:: IRF5305STRLPBF
Manufacturer:: Infineon

Infineon HEXFET Series MOSFET, 31A Maximum Continuous Drain Current, 110W Maximum Power Dissipation - IRF5305STRLPBF

This P-channel MOSFET is tailored for high-efficiency applications, delivering reliability and performance. It employs enhancement mode functionality, making it versatile for various electronic circuits. With robust specifications, it serves as a suitable option for automation and power management in electrical and mechanical environments.

Features & Benefits

• Maximum continuous drain current of 31A
• Maximum drain source voltage of 55V
• Surface mount configuration for seamless integration
• Maximum power dissipation capability of 110W for efficient operation
• Enhanced thermal performance with a maximum operating temperature of +175°C
• Low on-resistance of 60mΩ for improved efficiency

Applications

• For use with motor controls
• Suitable for power supply circuits
• Electronic switching
• Energy management solutions

What is the maximum gate threshold voltage?

The maximum gate threshold voltage is 4V, providing adequate control in circuit design.

How does the MOSFET handle heat?

It features a maximum power dissipation of 110W, enabling effective heat management in demanding applications.

Is this product compatible with surface mount designs?

Yes, it comes in a D2PAK package type designed specifically for surface mount applications.

What is the minimum operating temperature for functionality?

The device operates effectively at a minimum temperature of -55°C, ensuring versatility for various environments.

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	31 A
Maximum Drain Source Voltage	55 V
Series	HEXFET
Package Type	D2PAK (TO-263)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	60 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	110 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Transistor Material	Si
Width	9.65mm
Maximum Operating Temperature	+175 °C
Length	10.67mm
Typical Gate Charge @ Vgs	63 nC @ 10 V
Number of Elements per Chip	1
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	1.3V
Height	4.83mm