P-Channel MOSFET, 31 A, 55 V, 3-Pin TO-220AB Infineon IRF5305PBF

This MOSFET is tailored for high-efficiency power applications, providing both flexibility and reliability. Its enhancement mode operation makes it suitable for various systems requiring controlled switching, particularly in industrial and automation environments.

• Continuous drain current capacity of 31A supports demanding applications
• Voltage rating of 55V facilitates dependable switching
• Low on-resistance of 60mΩ reduces power loss
• TO-220AB package design enhances thermal performance
• Gate-source voltage range of ±20V accommodates diverse applications
• Rapid switching optimisation boosts overall system efficiency

• Used in motor control systems for efficient operation
• Applicable in power supply circuits for stable performance
• Integrated into electronic devices requiring effective switching capabilities
• Suitable for deployment in renewable energy systems

It operates within -55°C to +175°C, making it apt for extreme conditions.

The TO-220AB package provides low thermal resistance, improving cooling efficiency during operation.

Yes, it supports pulsed drain currents up to 110A, ensuring adequate performance for transient demands.

It is a P-channel Si MOSFET, optimised for high-efficiency applications.

Yes, the through-hole design allows for integration into automated systems and circuit boards.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.