Vishay SUM55P06-19L Type P-Channel MOSFET, 55 A, 60 V Enhancement, 3-Pin TO-263 SUM55P06-19L-E3
- RS Stock No.:
- 710-5020
- Mfr. Part No.:
- SUM55P06-19L-E3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
PHP687.80
(exc. VAT)
PHP770.35
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 105 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 20 | PHP137.56 | PHP687.80 |
| 25 - 95 | PHP133.432 | PHP667.16 |
| 100 - 245 | PHP125.426 | PHP627.13 |
| 250 - 495 | PHP114.138 | PHP570.69 |
| 500 + | PHP100.442 | PHP502.21 |
*price indicative
- RS Stock No.:
- 710-5020
- Mfr. Part No.:
- SUM55P06-19L-E3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 55A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-263 | |
| Series | SUM55P06-19L | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 19mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 3.75W | |
| Forward Voltage Vf | -1.5V | |
| Typical Gate Charge Qg @ Vgs | 76nC | |
| Maximum Operating Temperature | 175°C | |
| Width | 9.65 mm | |
| Height | 4.83mm | |
| Standards/Approvals | No | |
| Length | 10.41mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 55A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-263 | ||
Series SUM55P06-19L | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 19mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 3.75W | ||
Forward Voltage Vf -1.5V | ||
Typical Gate Charge Qg @ Vgs 76nC | ||
Maximum Operating Temperature 175°C | ||
Width 9.65 mm | ||
Height 4.83mm | ||
Standards/Approvals No | ||
Length 10.41mm | ||
Automotive Standard No | ||
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Related links
- Vishay SUM55P06-19L Type P-Channel MOSFET 60 V Enhancement, 3-Pin TO-263
- Vishay Type P-Channel MOSFET 100 V, 3-Pin TO-263
- Vishay Type P-Channel MOSFET 100 V, 3-Pin TO-263 SUM90P10-19L-E3
- STMicroelectronics STripFET II Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-263
- STMicroelectronics STripFET II Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-263 STB55NF06LT4
- Infineon HEXFET Type P-Channel MOSFET 55 V Enhancement, 3-Pin TO-263 IRF9Z34NSTRLPBF
- Infineon HEXFET Type P-Channel MOSFET 55 V Enhancement, 3-Pin TO-263
- Vishay Type P-Channel MOSFET 60 V Enhancement, 3-Pin TO-263