Infineon HEXFET Type N-Channel MOSFET, 94 A, 55 V Enhancement, 3-Pin TO-263 IRF1010ZSTRLPBF
- RS Stock No.:
- 915-4923
- Mfr. Part No.:
- IRF1010ZSTRLPBF
- Manufacturer:
- Infineon
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Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 40 | PHP101.425 | PHP1,014.25 |
| 50 - 240 | PHP82.906 | PHP829.06 |
| 250 - 490 | PHP70.269 | PHP702.69 |
| 500 - 1240 | PHP65.118 | PHP651.18 |
| 1250 + | PHP61.642 | PHP616.42 |
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- RS Stock No.:
- 915-4923
- Mfr. Part No.:
- IRF1010ZSTRLPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 94A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 7.5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 140W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 63nC | |
| Forward Voltage Vf | -1.3V | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.83mm | |
| Length | 10.67mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 94A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 7.5mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 140W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 63nC | ||
Forward Voltage Vf -1.3V | ||
Maximum Operating Temperature 175°C | ||
Height 4.83mm | ||
Length 10.67mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
Infineon HEXFET Series MOSFET, 94A Maximum Continuous Drain Current, 140W Maximum Power Dissipation - IRF1010ZSTRLPBF
This surface mount MOSFET provides exceptional performance in various applications. Created by Infineon, it leverages Advanced processing techniques to deliver low on-resistance and high current handling capabilities. Its effectiveness in high-temperature environments makes it an important component for professionals in automation, electronics, electrical, and mechanical sectors.
Features & Benefits
• High continuous drain current of 94A supports substantial load applications
• Low RDS(on) of 7.5mΩ minimises power losses and enhances efficiency
• Maximum drain-source voltage of 55V enables design flexibility
• High reliability with a maximum operating temperature of 175°C
• Fast switching capabilities reduce delays in circuit response
• N-channel configuration is suitable for Advanced electronic designs
Applications
• Utilised in power management and conversion systems
• Employed in motor control circuits for automation technologies
• Suitable for power supply designs demanding high efficiency
• Integral in electric vehicle power electronics
• Used in renewable energy systems for effective energy conversion
What are the implications of the low on-resistance feature?
The low on-resistance of 7.5mΩ ensures minimal heat generation during operation, leading to increased efficiency and reduced cooling requirements.
How does this MOSFET perform in high-temperature environments?
It supports maximum operating temperatures of up to 175°C, making it suitable for harsh conditions without compromising performance.
What type of mounting is required for this component?
This device is designed for surface mount applications, allowing Compact layout and efficient thermal management on printed circuit boards.
Can it handle pulsed currents effectively?
Yes, it features a pulsed drain current rating of 360A, enabling it to manage transient conditions efficiently.
What characteristics should I consider for circuit compatibility?
Ensure that the gate threshold voltage ranges from 2V to 4V to ensure proper switching behaviour within your circuit design.
Related links
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-247
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-247 IRFP90N20DPBF
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-263