Infineon OptiMOS 3 Type N-Channel MOSFET, 100 A, 150 V Enhancement, 3-Pin TO-263

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Subtotal (1 reel of 1000 units)*

PHP127,596.00

(exc. VAT)

PHP142,908.00

(inc. VAT)

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RS Stock No.:
911-4864
Mfr. Part No.:
IPB072N15N3GATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

150V

Series

OptiMOS 3

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

7.7mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

70nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

300W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Length

10.31mm

Width

9.45 mm

Standards/Approvals

No

Height

4.57mm

Automotive Standard

No

COO (Country of Origin):
DE

Infineon OptiMOS™3 Power MOSFETs, 100V and over


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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