N-Channel MOSFET, 120 A, 100 V, 3-Pin D2PAK Infineon IPB027N10N3GATMA1

RS Stock No.:: 911-0890
Mfr. Part No.:: IPB027N10N3GATMA1
Manufacturer:: Infineon

N-Channel MOSFET, 120 A, 100 V, 3-Pin D2PAK Infineon IPB027N10N3GATMA1

Price Each (On a Reel of 1000)

PHP190.896

(exc. VAT)

PHP213.804

(inc. VAT)

4352 In Global stock for delivery NCR Plus within 10 working day(s), rest of PH within 14 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per Unit	Per Reel**
1000 +	PHP190.896	PHP190,896.00

**price indicative

RS Stock No.:: 911-0890
Mfr. Part No.:: IPB027N10N3GATMA1
Manufacturer:: Infineon

IPB027N10N3 G, OptiMOS3 Power-Transistor
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	120 A
Maximum Drain Source Voltage	100 V
Package Type	D2PAK (TO-263)
Series	OptiMOS™ 3
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	4.5 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.5V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	300 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+175 °C
Length	10.31mm
Typical Gate Charge @ Vgs	155 nC @ 10 V
Number of Elements per Chip	1
Width	9.45mm
Minimum Operating Temperature	-55 °C
Height	4.57mm

N-Channel MOSFET, 120 A, 100 V, 3-Pin D2PAK Infineon IPB027N10N3GATMA1

Infineon OptiMOS™3 Power MOSFETs, 100V and over

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