N-Channel MOSFET, 180 A, 120 V, 7-Pin D2PAK-7 Infineon IPB036N12N3GATMA1

RS Stock No.:: 754-5428
Mfr. Part No.:: IPB036N12N3GATMA1
Manufacturer:: Infineon

N-Channel MOSFET, 180 A, 120 V, 7-Pin D2PAK-7 Infineon IPB036N12N3GATMA1

This image is representative of the product range

Bulk discount available

Subtotal (1 unit)**

PHP323.64

(exc. VAT)

PHP362.48

(inc. VAT)

985 In Global stock for delivery NCR Plus within 10 working day(s), rest of PH within 14 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for over PHP7,000.00 (ex VAT)

Units	Per Unit
1 - 9	PHP323.64
10 - 49	PHP313.98
50 - 99	PHP291.55
100 - 249	PHP234.32
250 +	PHP198.36

**price indicative

RS Stock No.:: 754-5428
Mfr. Part No.:: IPB036N12N3GATMA1
Manufacturer:: Infineon

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	180 A
Maximum Drain Source Voltage	120 V
Package Type	D2PAK (TO-263)
Series	OptiMOS™ 3
Mounting Type	Surface Mount
Pin Count	7
Maximum Drain Source Resistance	3.6 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	300 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Width	9.45mm
Maximum Operating Temperature	+175 °C
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	158 nC @ 10 V
Length	10.31mm
Transistor Material	Si
Height	4.57mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 180 A, 120 V, 7-Pin D2PAK-7 Infineon IPB036N12N3GATMA1

FREE delivery for over PHP7,000.00 (ex VAT)

Infineon OptiMOS™3 Power MOSFETs, 100V and over

Related links