N-Channel MOSFET, 180 A, 100 V, 7-Pin D2PAK-7 Infineon IPB025N10N3GATMA1

RS Stock No.:: 754-5421
Mfr. Part No.:: IPB025N10N3GATMA1
Manufacturer:: Infineon

N-Channel MOSFET, 180 A, 100 V, 7-Pin D2PAK-7 Infineon IPB025N10N3GATMA1

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Subtotal (1 unit)**

PHP284.67

(exc. VAT)

PHP318.83

(inc. VAT)

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Units	Per Unit
1 - 9	PHP284.67
10 - 49	PHP276.13
50 - 99	PHP265.08
100 - 249	PHP251.83
250 +	PHP236.71

**price indicative

RS Stock No.:: 754-5421
Mfr. Part No.:: IPB025N10N3GATMA1
Manufacturer:: Infineon

MOSFET N-ch OptiMOS3 100V 180A TO263-7
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	180 A
Maximum Drain Source Voltage	100 V
Series	OptiMOS™ 3
Package Type	D2PAK (TO-263)
Mounting Type	Surface Mount
Pin Count	7
Maximum Drain Source Resistance	4.4 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.5V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	300 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Typical Gate Charge @ Vgs	155 nC @ 10 V
Number of Elements per Chip	1
Maximum Operating Temperature	+175 °C
Transistor Material	Si
Width	9.45mm
Length	10.31mm
Height	4.57mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 180 A, 100 V, 7-Pin D2PAK-7 Infineon IPB025N10N3GATMA1

FREE delivery for over PHP7,000.00 (ex VAT)

Infineon OptiMOS™3 Power MOSFETs, 100V and over

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