Infineon OptiMOS 5 Type N-Channel MOSFET, 180 A, 100 V Enhancement, 7-Pin TO-263 IPB024N10N5ATMA1

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Subtotal (1 pack of 5 units)*

PHP1,270.06

(exc. VAT)

PHP1,422.465

(inc. VAT)

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Units
Per Unit
Per Pack*
5 - 5PHP254.012PHP1,270.06
10 - 95PHP232.81PHP1,164.05
100 - 245PHP214.854PHP1,074.27
250 - 495PHP199.488PHP997.44
500 +PHP194.078PHP970.39

*price indicative

Packaging Options:
RS Stock No.:
214-9009
Mfr. Part No.:
IPB024N10N5ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

180A

Maximum Drain Source Voltage Vds

100V

Series

OptiMOS 5

Package Type

TO-263

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

2.4mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon OptiMOS 5 100V power MOSFET is especially designed for synchronous rectification in telecom blocks including Or-ing, hot swap and battery protection as well as for server power supply applications. The device has a lower RDS(on) of 22% compared to similar devices , one of the biggest contributors to this industry leading FOM is the low on-state resistance providing the highest level of power density and efficiency.

100% avalanche tested

Qualified according to JEDEC for target applications

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