Infineon OptiMOS 5 Type N-Channel MOSFET, 180 A, 100 V Enhancement, 7-Pin TO-263 IPB024N10N5ATMA1

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Subtotal (1 pack of 5 units)*

PHP1,431.54

(exc. VAT)

PHP1,603.325

(inc. VAT)

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Units
Per Unit
Per Pack*
5 - 5PHP286.308PHP1,431.54
10 - 95PHP262.41PHP1,312.05
100 - 245PHP242.172PHP1,210.86
250 - 495PHP224.854PHP1,124.27
500 +PHP218.756PHP1,093.78

*price indicative

Packaging Options:
RS Stock No.:
214-9009
Mfr. Part No.:
IPB024N10N5ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

180A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-263

Series

OptiMOS 5

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

2.4mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon OptiMOS 5 100V power MOSFET is especially designed for synchronous rectification in telecom blocks including Or-ing, hot swap and battery protection as well as for server power supply applications. The device has a lower RDS(on) of 22% compared to similar devices , one of the biggest contributors to this industry leading FOM is the low on-state resistance providing the highest level of power density and efficiency.

100% avalanche tested

Qualified according to JEDEC for target applications

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