Infineon OptiMOS 3 Type N-Channel MOSFET, 120 A, 100 V Enhancement, 3-Pin TO-263 IPB027N10N3GATMA1
- RS Stock No.:
- 825-9235
- Mfr. Part No.:
- IPB027N10N3GATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
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Subtotal (1 pack of 2 units)*
PHP419.44
(exc. VAT)
PHP469.78
(inc. VAT)
FREE delivery for orders over ₱3,000.00
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- 2,300 unit(s) shipping from January 01, 2026
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Units | Per Unit | Per Pack* |
|---|---|---|
| 2 - 8 | PHP209.72 | PHP419.44 |
| 10 - 38 | PHP203.425 | PHP406.85 |
| 40 - 98 | PHP197.32 | PHP394.64 |
| 100 - 198 | PHP191.40 | PHP382.80 |
| 200 + | PHP185.665 | PHP371.33 |
*price indicative
- RS Stock No.:
- 825-9235
- Mfr. Part No.:
- IPB027N10N3GATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 120A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-263 | |
| Series | OptiMOS 3 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.5mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 300W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 155nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.31mm | |
| Width | 9.45 mm | |
| Standards/Approvals | No | |
| Height | 4.57mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 120A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-263 | ||
Series OptiMOS 3 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.5mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 300W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 155nC | ||
Maximum Operating Temperature 175°C | ||
Length 10.31mm | ||
Width 9.45 mm | ||
Standards/Approvals No | ||
Height 4.57mm | ||
Automotive Standard No | ||
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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