N-Channel MOSFET, 120 A, 100 V, 3-Pin D2PAK Infineon IPB027N10N3GATMA1

RS Stock No.:: 825-9235
Mfr. Part No.:: IPB027N10N3GATMA1
Manufacturer:: Infineon

N-Channel MOSFET, 120 A, 100 V, 3-Pin D2PAK Infineon IPB027N10N3GATMA1

Bulk discount available

Price Each (In a Pack of 2)**

PHP174.04

(exc. VAT)

PHP194.92

(inc. VAT)

Available for back order.*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for over PHP7,000.00 (ex VAT)

Units	Per Unit	Per Pack**
2 - 8	PHP174.04	PHP348.08
10 - 38	PHP168.82	PHP337.64
40 - 98	PHP163.755	PHP327.51
100 - 198	PHP158.84	PHP317.68
200 +	PHP154.08	PHP308.16

**price indicative

RS Stock No.:: 825-9235
Mfr. Part No.:: IPB027N10N3GATMA1
Manufacturer:: Infineon

IPB027N10N3 G, OptiMOS3 Power-Transistor
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	120 A
Maximum Drain Source Voltage	100 V
Package Type	D2PAK (TO-263)
Series	OptiMOS™ 3
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	4.5 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.5V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	300 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Maximum Operating Temperature	+175 °C
Transistor Material	Si
Width	9.45mm
Length	10.31mm
Typical Gate Charge @ Vgs	155 nC @ 10 V
Height	4.57mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 120 A, 100 V, 3-Pin D2PAK Infineon IPB027N10N3GATMA1

FREE delivery for over PHP7,000.00 (ex VAT)

Infineon OptiMOS™3 Power MOSFETs, 100V and over

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