Infineon OptiMOS 3 Type N-Channel MOSFET, 120 A, 60 V Enhancement, 3-Pin TO-220 IPP032N06N3GXKSA1
- RS Stock No.:
- 892-2100
- Mfr. Part No.:
- IPP032N06N3GXKSA1
- Manufacturer:
- Infineon
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View bulk pricing optionsSubtotal (1 pack of 5 units)*
PHP666.10
(exc. VAT)
PHP746.05
(inc. VAT)
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In Stock
- Plus 10 unit(s) shipping from August 31, 2026
- Plus 150 unit(s) shipping from September 07, 2026
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Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 20 | PHP133.22 | PHP666.10 |
| 25 - 95 | PHP129.222 | PHP646.11 |
| 100 - 245 | PHP125.348 | PHP626.74 |
| 250 - 495 | PHP121.59 | PHP607.95 |
| 500 + | PHP117.942 | PHP589.71 |
*price indicative
- RS Stock No.:
- 892-2100
- Mfr. Part No.:
- IPP032N06N3GXKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 120A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-220 | |
| Series | OptiMOS 3 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.2mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 188W | |
| Typical Gate Charge Qg @ Vgs | 124nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.36mm | |
| Height | 15.95mm | |
| Standards/Approvals | No | |
| Width | 4.57mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 120A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-220 | ||
Series OptiMOS 3 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.2mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 188W | ||
Typical Gate Charge Qg @ Vgs 124nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Length 10.36mm | ||
Height 15.95mm | ||
Standards/Approvals No | ||
Width 4.57mm | ||
Automotive Standard No | ||
Infineon OptiMOS™3 Power MOSFETs, 60 to 80V
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
Fast switching MOSFET for SMPS
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Pb-free plating
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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