Infineon OptiMOS 3 Type N-Channel MOSFET, 50 A, 150 V Enhancement, 3-Pin TO-263 IPB200N15N3GATMA1
- RS Stock No.:
- 754-5443
- Mfr. Part No.:
- IPB200N15N3GATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
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Subtotal (1 pack of 2 units)*
PHP362.52
(exc. VAT)
PHP406.02
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Last RS stock
- 12 left, ready to ship from another location
- Plus 60 unit(s) shipping from December 29, 2025
- Final 5,766 unit(s) shipping from January 01, 2026
Units | Per Unit | Per Pack* |
|---|---|---|
| 2 - 8 | PHP181.26 | PHP362.52 |
| 10 - 38 | PHP175.81 | PHP351.62 |
| 40 - 98 | PHP170.535 | PHP341.07 |
| 100 - 198 | PHP165.415 | PHP330.83 |
| 200 + | PHP160.45 | PHP320.90 |
*price indicative
- RS Stock No.:
- 754-5443
- Mfr. Part No.:
- IPB200N15N3GATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | OptiMOS 3 | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 20mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 150W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 10.31mm | |
| Width | 9.45 mm | |
| Height | 4.57mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series OptiMOS 3 | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 20mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 150W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 10.31mm | ||
Width 9.45 mm | ||
Height 4.57mm | ||
Automotive Standard No | ||
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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