Vishay Isolated Si4599DY 2 Type N, Type P-Channel MOSFET, 6.8 A, 40 V Enhancement, 8-Pin SOIC SI4599DY-T1-GE3

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Subtotal (1 pack of 20 units)*

PHP904.92

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PHP1,013.52

(inc. VAT)

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Being discontinued
  • Final 9,520 unit(s), ready to ship from another location
Units
Per Unit
Per Pack*
20 - 20PHP45.246PHP904.92
40 - 80PHP43.889PHP877.78
100 - 180PHP42.572PHP851.44
200 - 380PHP41.295PHP825.90
400 +PHP40.057PHP801.14

*price indicative

Packaging Options:
RS Stock No.:
812-3233
Mfr. Part No.:
SI4599DY-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N, Type P

Maximum Continuous Drain Current Id

6.8A

Maximum Drain Source Voltage Vds

40V

Package Type

SOIC

Series

Si4599DY

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.045Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

3.1W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

25nC

Maximum Gate Source Voltage Vgs

±20 V

Forward Voltage Vf

1.2V

Transistor Configuration

Isolated

Maximum Operating Temperature

150°C

Standards/Approvals

JEDEC JS709A, RoHS

Length

5mm

Height

1.55mm

Width

4 mm

Number of Elements per Chip

2

Automotive Standard

No

COO (Country of Origin):
CN

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