Vishay Isolated Si4599DY 2 Type N, Type P-Channel MOSFET, 6.8 A, 40 V Enhancement, 8-Pin SOIC SI4599DY-T1-GE3

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Subtotal (1 pack of 20 units)*

PHP843.60

(exc. VAT)

PHP944.80

(inc. VAT)

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Being discontinued
  • Final 9,520 unit(s), ready to ship from another location
Units
Per Unit
Per Pack*
20 - 20PHP42.18PHP843.60
40 - 80PHP40.915PHP818.30
100 - 180PHP39.687PHP793.74
200 - 380PHP38.497PHP769.94
400 +PHP37.342PHP746.84

*price indicative

Packaging Options:
RS Stock No.:
812-3233
Mfr. Part No.:
SI4599DY-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N, Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

6.8A

Maximum Drain Source Voltage Vds

40V

Package Type

SOIC

Series

Si4599DY

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.045Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

25nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

3.1W

Maximum Gate Source Voltage Vgs

±20 V

Maximum Operating Temperature

150°C

Transistor Configuration

Isolated

Height

1.55mm

Length

5mm

Width

4 mm

Standards/Approvals

JEDEC JS709A, RoHS

Number of Elements per Chip

2

Automotive Standard

No

COO (Country of Origin):
CN

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