onsemi UniFET Type N-Channel MOSFET, 44 A, 250 V Enhancement, 3-Pin TO-263 FDB44N25TM

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PHP308.56

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PHP345.58

(inc. VAT)

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  • Plus 4,616 unit(s) shipping from January 01, 2026
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Units
Per Unit
Per Pack*
2 - 8PHP154.28PHP308.56
10 - 38PHP151.20PHP302.40
40 - 98PHP148.175PHP296.35
100 - 198PHP145.21PHP290.42
200 +PHP142.305PHP284.61

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Packaging Options:
RS Stock No.:
759-8989
Mfr. Part No.:
FDB44N25TM
Manufacturer:
onsemi
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Brand

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

44A

Maximum Drain Source Voltage Vds

250V

Package Type

TO-263

Series

UniFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

69mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.4V

Typical Gate Charge Qg @ Vgs

47nC

Maximum Power Dissipation Pd

307W

Maximum Gate Source Voltage Vgs

30 V

Maximum Operating Temperature

150°C

Height

4.83mm

Standards/Approvals

No

Width

11.33 mm

Length

10.67mm

Automotive Standard

No

UniFET™ N-Channel MOSFET, Fairchild Semiconductor


UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the Planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress.

UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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