onsemi UniFET Type N-Channel MOSFET, 33 A, 250 V Enhancement, 3-Pin TO-263 FDB33N25TM

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Subtotal (1 pack of 2 units)*

PHP315.95

(exc. VAT)

PHP353.864

(inc. VAT)

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  • Plus 1,554 left, shipping from January 01, 2026
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Units
Per Unit
Per Pack*
2 - 8PHP157.975PHP315.95
10 - 38PHP153.22PHP306.44
40 - 98PHP148.63PHP297.26
100 - 198PHP144.175PHP288.35
200 +PHP139.855PHP279.71

*price indicative

Packaging Options:
RS Stock No.:
759-8973
Mfr. Part No.:
FDB33N25TM
Manufacturer:
onsemi
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Brand

onsemi

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

33A

Maximum Drain Source Voltage Vds

250V

Series

UniFET

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

94mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

36.8nC

Forward Voltage Vf

1.4V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

235W

Maximum Gate Source Voltage Vgs

30 V

Maximum Operating Temperature

150°C

Width

11.33 mm

Length

10.67mm

Standards/Approvals

No

Height

4.83mm

Automotive Standard

No

UniFET™ N-Channel MOSFET, Fairchild Semiconductor


UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the Planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress.

UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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