onsemi UniFET Type N-Channel MOSFET, 52 A, 200 V Enhancement, 3-Pin TO-263 FDB52N20TM
- RS Stock No.:
- 759-8983
- Mfr. Part No.:
- FDB52N20TM
- Manufacturer:
- onsemi
This image is representative of the product range
Supply shortage
Due to a global supply shortage, we don't know when this will be back in stock.
- RS Stock No.:
- 759-8983
- Mfr. Part No.:
- FDB52N20TM
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 52A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TO-263 | |
| Series | UniFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 49mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Forward Voltage Vf | 1.4V | |
| Maximum Power Dissipation Pd | 357W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 49nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 4.572mm | |
| Width | 10.16 mm | |
| Length | 9.98mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 52A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TO-263 | ||
Series UniFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 49mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Forward Voltage Vf 1.4V | ||
Maximum Power Dissipation Pd 357W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 49nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 4.572mm | ||
Width 10.16 mm | ||
Length 9.98mm | ||
Automotive Standard No | ||
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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