onsemi UniFET Type N-Channel MOSFET, 39 A, 200 V Enhancement, 3-Pin TO-220 FDPF39N20

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Subtotal (1 pack of 5 units)*

PHP611.52

(exc. VAT)

PHP684.90

(inc. VAT)

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Last RS stock
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Units
Per Unit
Per Pack*
5 - 20PHP122.304PHP611.52
25 - 95PHP118.634PHP593.17
100 - 245PHP115.078PHP575.39
250 - 495PHP111.624PHP558.12
500 +PHP108.276PHP541.38

*price indicative

Packaging Options:
RS Stock No.:
806-3614
Mfr. Part No.:
FDPF39N20
Manufacturer:
onsemi
Find similar products by selecting one or more attributes.
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Brand

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

39A

Maximum Drain Source Voltage Vds

200V

Series

UniFET

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

66mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

38nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

37W

Forward Voltage Vf

1.4V

Maximum Operating Temperature

150°C

Height

16.07mm

Width

4.9 mm

Standards/Approvals

No

Length

10.36mm

Automotive Standard

No

UniFET™ N-Channel MOSFET, Fairchild Semiconductor


UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the Planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress.

UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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