onsemi UniFET Type N-Channel MOSFET, 55 A, 60 V Enhancement, 3-Pin TO-220 FDPF55N06

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Subtotal (1 pack of 5 units)*

PHP674.24

(exc. VAT)

PHP755.15

(inc. VAT)

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Units
Per Unit
Per Pack*
5 - 20PHP134.848PHP674.24
25 - 95PHP130.804PHP654.02
100 - 245PHP126.882PHP634.41
250 - 495PHP123.078PHP615.39
500 +PHP119.386PHP596.93

*price indicative

Packaging Options:
RS Stock No.:
864-8607
Mfr. Part No.:
FDPF55N06
Manufacturer:
onsemi
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Brand

onsemi

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

55A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-220

Series

UniFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

22mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

30nC

Maximum Power Dissipation Pd

48W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

25 V

Forward Voltage Vf

1.4V

Maximum Operating Temperature

150°C

Height

16.07mm

Width

4.9 mm

Standards/Approvals

No

Length

10.36mm

Automotive Standard

No

UniFET™ N-Channel MOSFET, Fairchild Semiconductor


UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the Planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress.

UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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