onsemi UniFET Type N-Channel MOSFET, 33 A, 250 V Enhancement, 3-Pin TO-220AB FDP33N25

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Subtotal (1 pack of 5 units)*

PHP566.44

(exc. VAT)

PHP634.415

(inc. VAT)

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Units
Per Unit
Per Pack*
5 - 20PHP113.288PHP566.44
25 - 95PHP102.578PHP512.89
100 - 245PHP97.382PHP486.91
250 - 495PHP91.972PHP459.86
500 +PHP86.248PHP431.24

*price indicative

Packaging Options:
RS Stock No.:
671-4819
Mfr. Part No.:
FDP33N25
Manufacturer:
onsemi
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Brand

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

33A

Maximum Drain Source Voltage Vds

250V

Package Type

TO-220AB

Series

UniFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

0.094Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

36.8nC

Forward Voltage Vf

1.4V

Maximum Gate Source Voltage Vgs

±30 V

Maximum Power Dissipation Pd

235W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

10.67mm

Standards/Approvals

No

Width

4.83 mm

Height

9.4mm

Automotive Standard

No

COO (Country of Origin):
MY

UniFET™ N-Channel MOSFET, Fairchild Semiconductor


UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the Planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress.

UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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