onsemi UniFET Type N-Channel MOSFET, 44 A, 500 V Enhancement, 3-Pin TO-247 FDH44N50
- RS Stock No.:
- 806-3438
- Mfr. Part No.:
- FDH44N50
- Manufacturer:
- onsemi
This image is representative of the product range
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View bulk pricing optionsSubtotal (1 unit)*
PHP618.31
(exc. VAT)
PHP692.51
(inc. VAT)
FREE delivery for orders over ₱5,000.00
In Stock
- Plus 9 unit(s) shipping from August 31, 2026
- Plus 32 unit(s) shipping from September 07, 2026
- Plus 450 unit(s) shipping from February 17, 2027
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Units | Per Unit |
|---|---|
| 1 - 9 | PHP618.31 |
| 10 - 49 | PHP599.77 |
| 50 - 99 | PHP581.79 |
| 100 - 249 | PHP564.33 |
| 250 + | PHP547.42 |
*price indicative
- RS Stock No.:
- 806-3438
- Mfr. Part No.:
- FDH44N50
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 44A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Series | UniFET | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 120mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 90nC | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Power Dissipation Pd | 750W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 15.87mm | |
| Width | 4.82mm | |
| Standards/Approvals | No | |
| Height | 20.82mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 44A | ||
Maximum Drain Source Voltage Vds 500V | ||
Series UniFET | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 120mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 90nC | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Power Dissipation Pd 750W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 15.87mm | ||
Width 4.82mm | ||
Standards/Approvals No | ||
Height 20.82mm | ||
Automotive Standard No | ||
UniFET™ N-Channel MOSFET, Fairchild Semiconductor
UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the Planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress.
UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Related links
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- onsemi UniFET Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-263
- onsemi UniFET Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-220 FDPF18N50