Infineon HEXFET Type N-Channel MOSFET, 3.6 A, 40 V Enhancement, 3-Pin SOT-23 IRLML0040TRPBF

RS Stock No.:: 725-9347
Mfr. Part No.:: IRLML0040TRPBF
Manufacturer:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 3.6 A, 40 V Enhancement, 3-Pin SOT-23 IRLML0040TRPBF

This image is representative of the product range

Bulk discount available

Subtotal (1 pack of 20 units)*

PHP271.70

(exc. VAT)

PHP304.30

(inc. VAT)

FREE delivery for orders over ₱3,000.00

In Stock

640 unit(s) ready to ship from another location
Plus 6,000 unit(s) shipping from January 02, 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per Unit	Per Pack*
20 - 20	PHP13.585	PHP271.70
40 - 80	PHP11.047	PHP220.94
100 - 180	PHP9.81	PHP196.20
200 - 380	PHP9.608	PHP192.16
400 +	PHP9.388	PHP187.76

*price indicative

RS Stock No.:: 725-9347
Mfr. Part No.:: IRLML0040TRPBF
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	3.6A
	Maximum Drain Source Voltage Vds	40V
	Package Type	SOT-23
	Series	HEXFET
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	56mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	16 V
	Maximum Power Dissipation Pd	1.3W
	Typical Gate Charge Qg @ Vgs	2.6nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Width	1.4 mm
	Height	1.02mm
	Length	3.04mm
	Standards/Approvals	No
	Automotive Standard	No
	Distrelec Product Id	304-45-310

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 3.6A
	Maximum Drain Source Voltage Vds 40V
	Package Type SOT-23
	Series HEXFET
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 56mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 16 V
	Maximum Power Dissipation Pd 1.3W
	Typical Gate Charge Qg @ Vgs 2.6nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Width 1.4 mm
	Height 1.02mm
	Length 3.04mm
	Standards/Approvals No
	Automotive Standard No
	Distrelec Product Id 304-45-310

Infineon HEXFET Series MOSFET, 3.6A Maximum Continuous Drain Current, 1.3W Maximum Power Dissipation - IRLML0040TRPBF

This power MOSFET is engineered for efficiency and reliability in a range of electronic circuits. With low on-resistance and high performance, it is suitable for applications that demand energy efficiency and robust operation. This component is notable for its ability to manage significant electrical loads, which makes it relevant for engineers and professionals in the automation and electronics sectors.

Features & Benefits

• Low RDS(on) of 56mΩ reduces switching losses

• Supports enhancement mode for efficient power control

• Maximum continuous drain current of 3.6A for steadfast operation

• Operates at a maximum drain-source voltage of 40V

• Designed for surface mount technology, perfect for compact designs

• Compatible with HEXFET technology for high performance

Applications

• Ideal for load and system switch

• Utilised in DC motor drive systems

• Effective for high-speed switching and amplifiers

• Suitable for surface mount in compact circuitry

• Employed in various power electronic circuits

What is the thermal resistance of this device?

The thermal resistance is typically 100°C/W, ensuring efficient heat dissipation during operation.

How does the gate threshold voltage impact device performance?

The gate threshold voltage ranges from 1.0 V to 2.5 V, providing flexibility in gate control across various applications.

Can it handle pulsed drain currents?

Yes, this component can endure pulsed drain currents that exceed its continuous rating, ensuring reliability in transient conditions.

What factors influence the maximum power dissipation of this component?

Power dissipation is mainly affected by ambient temperature and thermal resistance, which impact the junction temperature under load.

N-Channel Power MOSFET 40V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.