Infineon HEXFET Type N-Channel MOSFET, 4.1 A, 20 V Enhancement, 3-Pin SOT-23

RS Stock No.:: 165-7766
Mfr. Part No.:: IRLML6246TRPBF
Manufacturer:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 4.1 A, 20 V Enhancement, 3-Pin SOT-23

This image is representative of the product range

Subtotal (1 reel of 3000 units)*

PHP19,950.00

(exc. VAT)

PHP22,350.00

(inc. VAT)

FREE delivery for orders over ₱3,000.00

Temporarily out of stock

Shipping from February 15, 2027

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per Unit	Per Reel*
3000 +	PHP6.65	PHP19,950.00

*price indicative

RS Stock No.:: 165-7766
Mfr. Part No.:: IRLML6246TRPBF
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	4.1A
	Maximum Drain Source Voltage Vds	20V
	Package Type	SOT-23
	Series	HEXFET
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	66mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	1.3W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	3.5nC
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Height	1.02mm
	Length	3.04mm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 4.1A
	Maximum Drain Source Voltage Vds 20V
	Package Type SOT-23
	Series HEXFET
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 66mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 1.3W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 3.5nC
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Height 1.02mm
	Length 3.04mm
	Standards/Approvals No
	Automotive Standard No

COO (Country of Origin):: PH

Infineon HEXFET Series MOSFET, 20V Maximum Drain Source Voltage, 4.1A Maximum Continuous Drain Current - IRLML6246TRPBF

This MOSFET is a compact N‑channel enhancement device designed for low-voltage switching in surface-mount assemblies. It operates across a wide temperature range and accepts gate-drive levels compatible with common control circuits. The package and electrical characteristics make it appropriate for space‑constrained boards requiring efficient switching performance without elevated power‑handling requirements.

Features and Benefits:

• Maximum drain-source voltage 20V enables low-voltage switching applications
• Continuous drain current 4.1A supports moderate load currents
• Low on‑resistance 66 mΩ minimises conduction losses
• Typical gate charge 3.5 nC allows faster switching transitions
• Maximum power dissipation 1.3W suits constrained thermal budgets
• Gate-source tolerance up to 12V permits robust drive margins

Applications

• Suitable for battery-management switching in portable systems
• Ideal for load switching in power-distribution modules
• Used with gate drivers in motor-control low-voltage stages
• Can be used for DC-DC converter synchronous switching
• Suitable for signal-level high-speed switching in control circuits

What thermal extremes can this device tolerate in operation?

It is specified to operate from -55 °C up to 150 °C, allowing use in environments with wide temperature fluctuations.

How does the package influence PCB layout and assembly?

The SOT‑23 surface‑mount format with three pins reduces board area and supports automated pick‑and‑place and reflow processes.

What is the expected behaviour under higher gate voltages?

The device limits gate‑source ratings to 12V maximum, so gate drives should remain within this threshold to prevent gate‑oxide stress.

How does the device perform under continuous load?

Continuous drain current is rated at 4.1A while thermal dissipation is constrained to 1.3 W, so adequate copper area or heatsinking is required to maintain safe junction temperatures.