Infineon HEXFET Type P-Channel MOSFET, 3.6 A, 30 V Enhancement, 3-Pin SOT-23 IRLML9301TRPBF
- RS Stock No.:
- 725-9366
- Distrelec Article No.:
- 304-45-320
- Mfr. Part No.:
- IRLML9301TRPBF
- Manufacturer:
- Infineon
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PHP342.62
(exc. VAT)
PHP383.74
(inc. VAT)
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Last RS stock
- Final 420 unit(s), ready to ship from another location
Units | Per Unit | Per Pack* |
|---|---|---|
| 20 - 20 | PHP17.131 | PHP342.62 |
| 40 - 80 | PHP16.617 | PHP332.34 |
| 100 - 180 | PHP16.118 | PHP322.36 |
| 200 - 380 | PHP15.635 | PHP312.70 |
| 400 + | PHP15.166 | PHP303.32 |
*price indicative
- RS Stock No.:
- 725-9366
- Distrelec Article No.:
- 304-45-320
- Mfr. Part No.:
- IRLML9301TRPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3.6A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | HEXFET | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 64mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 4.8nC | |
| Maximum Power Dissipation Pd | 1.3W | |
| Forward Voltage Vf | -1.2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 3.04mm | |
| Width | 1.4mm | |
| Height | 1.02mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3.6A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series HEXFET | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 64mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 4.8nC | ||
Maximum Power Dissipation Pd 1.3W | ||
Forward Voltage Vf -1.2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 3.04mm | ||
Width 1.4mm | ||
Height 1.02mm | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 30V Maximum Drain Source Voltage, 3.6A Maximum Continuous Drain Current - IRLML9301TRPBF
This MOSFET semiconductor is designed for efficient power management in various electronic applications. It features a surface mount (SOT-23) design for easy integration in compact electronic circuits. The component operates effectively with a maximum continuous drain current of 3.6A and can handle a maximum drain-source voltage of 30V.
Features & Benefits
• Enhancement mode configuration allows for efficient operation
• High gate threshold voltage range enhances reliability
• Greater thermal resilience
• Optimised for Pulled Drain Current ratings, increasing performance reliability
Applications
• Used for power management in portable gadgets
• Ideal for automation control systems
• Utilised in audio amplifiers and signal processors
• Suitable for DC-DC converters in renewable energy systems
• Great fit for driving motors in robotic
What is the impact of the low on-resistance value on performance?
The low on-resistance of 64mΩ allows for reduced heat generation during operation, enhancing overall efficiency and prolonging component life in high-current applications.
How does the enhancement mode benefit circuit design?
The enhancement mode enables the MOSFET to remain off until a specific gate voltage is reached, providing reliable switching control suited for various electronic designs without unnecessary power loss.
Can this component handle high temperatures?
Yes, it is designed to operate reliably at temperatures up to +150°C, making it suitable for applications exposed to harsh environments or intensive use.
Related links
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- Infineon HEXFET Type P-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Infineon HEXFET Type P-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23
- Infineon HEXFET Type P-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Infineon HEXFET Type P-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23