Infineon HEXFET Type P-Channel MOSFET, 4.3 A, 20 V Enhancement, 3-Pin SOT-23

RS Stock No.:: 912-8661
Mfr. Part No.:: IRLML2244TRPBF
Manufacturer:: Infineon

Infineon HEXFET Type P-Channel MOSFET, 4.3 A, 20 V Enhancement, 3-Pin SOT-23

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Subtotal (1 reel of 3000 units)*

PHP14,700.00

(exc. VAT)

PHP16,470.00

(inc. VAT)

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In Stock

153,000 unit(s) ready to ship from another location

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Units	Per Unit	Per Reel*
3000 - 3000	PHP4.90	PHP14,700.00
6000 - 9000	PHP4.753	PHP14,259.00
12000 - 27000	PHP4.61	PHP13,830.00
30000 +	PHP4.472	PHP13,416.00

*price indicative

RS Stock No.:: 912-8661
Mfr. Part No.:: IRLML2244TRPBF
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	4.3A
	Maximum Drain Source Voltage Vds	20V
	Series	HEXFET
	Package Type	SOT-23
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	95mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	-1.2V
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	12 V
	Typical Gate Charge Qg @ Vgs	6.9nC
	Maximum Power Dissipation Pd	1.3W
	Maximum Operating Temperature	150°C
	Length	3.04mm
	Standards/Approvals	No
	Width	1.4 mm
	Height	1.02mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 4.3A
	Maximum Drain Source Voltage Vds 20V
	Series HEXFET
	Package Type SOT-23
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 95mΩ
	Channel Mode Enhancement
	Forward Voltage Vf -1.2V
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 12 V
	Typical Gate Charge Qg @ Vgs 6.9nC
	Maximum Power Dissipation Pd 1.3W
	Maximum Operating Temperature 150°C
	Length 3.04mm
	Standards/Approvals No
	Width 1.4 mm
	Height 1.02mm
	Automotive Standard No

COO (Country of Origin):: PH

Infineon HEXFET Series MOSFET, 4.3A Maximum Continuous Drain Current, 20V Maximum Drain Source Voltage - IRLML2244TRPBF

This MOSFET is designed for robust performance in a compact SOT-23 package. With a maximum continuous drain current of 4.3A and a drain-source voltage of 20V, it is suitable for various applications in the automation, electronics, and electrical industries. The device features enhancement mode operation and offers reliable performance in high-temperature environments, maintaining functionality in temperatures up to +150°C.

Features & Benefits

• Low RDS(on) of 54mΩ minimises switching losses

• Compatible with industry-standard pinout for easy integration

• High reliability with a maximum power dissipation of 1.3W

• Narrow temperature range for optimal operational efficiency

• Reduced gate charge enhances overall efficiency

Applications

• Ideal for low-voltage switching in electronics

• Suitable for power management in DC-DC converters

• Utilised in motor control systems for automation equipment

• Used in power supply circuits for enhanced energy management

What is the significance of the low RDS(on) in this component?

The low RDS(on) significantly reduces the power losses during operation, leading to improved efficiency and performance, especially in switching applications.

How does the operating temperature range benefit circuit design?

An operating temperature range of -55°C to +150°C allows for versatility in applications, enabling the MOSFET to function reliably in various operating environments, from extreme cold to high heat.

What makes this device suitable for surface mount technology?

The compact SOT-23 package design and compatible pinout facilitate easy integration into PCB layouts, enhancing manufacturing efficiency and allowing for mass production.

Can this MOSFET be used in automotive applications?

Yes, due to its high thermal resistance and reliability at elevated temperatures, it is suitable for automotive applications where heat dissipation is critical.