Infineon HEXFET Type P-Channel MOSFET, 3 A, 30 V Enhancement, 3-Pin SOT-23 IRLML5203TRPBF

RS Stock No.:: 784-0325
Mfr. Part No.:: IRLML5203TRPBF
Manufacturer:: Infineon

Infineon HEXFET Type P-Channel MOSFET, 3 A, 30 V Enhancement, 3-Pin SOT-23 IRLML5203TRPBF

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PHP164.64

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PHP184.40

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310 unit(s) ready to ship from another location
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Units	Per Unit	Per Pack*
10 - 10	PHP16.464	PHP164.64
20 - 40	PHP15.97	PHP159.70
50 - 90	PHP15.491	PHP154.91
100 - 190	PHP15.026	PHP150.26
200 +	PHP14.576	PHP145.76

*price indicative

RS Stock No.:: 784-0325
Mfr. Part No.:: IRLML5203TRPBF
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	3A
	Maximum Drain Source Voltage Vds	30V
	Series	HEXFET
	Package Type	SOT-23
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	165mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	9.5nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	1.25W
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	-1.2V
	Maximum Operating Temperature	150°C
	Height	1.02mm
	Standards/Approvals	No
	Width	1.4 mm
	Length	3.04mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 3A
	Maximum Drain Source Voltage Vds 30V
	Series HEXFET
	Package Type SOT-23
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 165mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 9.5nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 1.25W
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf -1.2V
	Maximum Operating Temperature 150°C
	Height 1.02mm
	Standards/Approvals No
	Width 1.4 mm
	Length 3.04mm
	Automotive Standard No

Infineon HEXFET Series MOSFET, 3A Maximum Continuous Drain Current, 30V Maximum Drain Source Voltage - IRLML5203TRPBF

This MOSFET is a high-performance power device suitable for a range of applications in the electronics sector. Featuring a compact SOT-23 package, this P-channel device provides significant efficiency with a maximum continuous drain current of 3A and a drain-source voltage of 30V. With dimensions of 3.04mm in length, 1.4mm in width, and 1.02mm in height, it is well-suited for space-constrained designs.

Features & Benefits

• Capable of 30V drain-source voltage for versatile use

• Designed for surface mount for simplified PCB design

• Operates within a temperature range of -55°C to +150°C

• Utilises enhancement mode for reliable switching performance

Applications

• Utilised in battery management systems for optimal performance

• Used in portable electronics due to low-profile design

• Applied in load management solutions across various devices

• Suitable for advanced automation control systems

What is the significance of the low Rds(on) in this device?

The low Rds(on) ensures reduced power loss during operation, which enhances overall efficiency and maintains lower thermal levels in applications.

How does the power dissipation capability impact device performance?

The capability to dissipate up to 1.25W allows for effective heat management, ensuring the device operates reliably even under maximum load conditions without thermal failure.

What factors influence the selection of this MOSFET for a specific application?

Factors such as maximum continuous drain current, voltage ratings, and thermal characteristics should be considered to ensure compatibility with circuit requirements and performance expectations.