Infineon HEXFET Type P-Channel MOSFET, 3.6 A, 30 V Enhancement, 3-Pin SOT-23

RS Stock No.:: 913-4060
Mfr. Part No.:: IRLML9301TRPBF
Manufacturer:: Infineon

Infineon HEXFET Type P-Channel MOSFET, 3.6 A, 30 V Enhancement, 3-Pin SOT-23

This image is representative of the product range

Bulk discount available

Subtotal (1 reel of 3000 units)*

PHP15,741.00

(exc. VAT)

PHP17,631.00

(inc. VAT)

FREE delivery for orders over ₱3,000.00

In Stock

54,000 unit(s) ready to ship from another location

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per Unit	Per Reel*
3000 - 3000	PHP5.247	PHP15,741.00
6000 - 9000	PHP5.09	PHP15,270.00
12000 - 27000	PHP4.937	PHP14,811.00
30000 - 57000	PHP4.789	PHP14,367.00
60000 +	PHP4.645	PHP13,935.00

*price indicative

RS Stock No.:: 913-4060
Mfr. Part No.:: IRLML9301TRPBF
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	3.6A
	Maximum Drain Source Voltage Vds	30V
	Package Type	SOT-23
	Series	HEXFET
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	64mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	1.3W
	Typical Gate Charge Qg @ Vgs	4.8nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	-1.2V
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Height	1.02mm
	Width	1.4 mm
	Length	3.04mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 3.6A
	Maximum Drain Source Voltage Vds 30V
	Package Type SOT-23
	Series HEXFET
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 64mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 1.3W
	Typical Gate Charge Qg @ Vgs 4.8nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf -1.2V
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Height 1.02mm
	Width 1.4 mm
	Length 3.04mm
	Automotive Standard No

Infineon HEXFET Series MOSFET, 30V Maximum Drain Source Voltage, 3.6A Maximum Continuous Drain Current - IRLML9301TRPBF

This MOSFET semiconductor is designed for efficient power management in various electronic applications. It features a surface mount (SOT-23) design for easy integration in compact electronic circuits. The component operates effectively with a maximum continuous drain current of 3.6A and can handle a maximum drain-source voltage of 30V.

Features & Benefits

• Enhancement mode configuration allows for efficient operation

• High gate threshold voltage range enhances reliability

• Greater thermal resilience

• Optimised for Pulled Drain Current ratings, increasing performance reliability

Applications

• Used for power management in portable gadgets

• Ideal for automation control systems

• Utilised in audio amplifiers and signal processors

• Suitable for DC-DC converters in renewable energy systems

• Great fit for driving motors in robotic

What is the impact of the low on-resistance value on performance?

The low on-resistance of 64mΩ allows for reduced heat generation during operation, enhancing overall efficiency and prolonging component life in high-current applications.

How does the enhancement mode benefit circuit design?

The enhancement mode enables the MOSFET to remain off until a specific gate voltage is reached, providing reliable switching control suited for various electronic designs without unnecessary power loss.

Can this component handle high temperatures?

Yes, it is designed to operate reliably at temperatures up to +150°C, making it suitable for applications exposed to harsh environments or intensive use.