N-Channel MOSFET, 5.3 A, 30 V, 3-Pin SOT-23 Infineon IRLML0030TRPBF

RS Stock No.:: 913-4042
Mfr. Part No.:: IRLML0030TRPBF
Manufacturer:: Infineon

N-Channel MOSFET, 5.3 A, 30 V, 3-Pin SOT-23 Infineon IRLML0030TRPBF

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Subtotal (1 reel of 3000 units)**

PHP16,455.00

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PHP18,429.00

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Units	Per Unit	Per Reel**
3000 - 3000	PHP5.485	PHP16,455.00
6000 - 9000	PHP5.389	PHP16,167.00
12000 - 27000	PHP5.104	PHP15,312.00
30000 - 57000	PHP4.851	PHP14,553.00
60000 +	PHP4.755	PHP14,265.00

**price indicative

RS Stock No.:: 913-4042
Mfr. Part No.:: IRLML0030TRPBF
Manufacturer:: Infineon

N-Channel Power MOSFET 30V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 5.3A Maximum Continuous Drain Current, 1.3W Maximum Power Dissipation - IRLML0030TRPBF

This MOSFET is designed to deliver efficient switching for electronic circuits across various industrial applications. Its enhancement mode FET configuration ensures optimal performance for load or system switching tasks. As a key component in the automation and electronics sectors, it offers versatility and high dependability, making it a fundamental selection for engineers.

Features & Benefits

• 5.3A continuous drain current extends operational capability
• 30V maximum drain-source voltage supports rigorous applications
• Low Rds(on) of 27 mΩ minimises energy losses during operation
• Compatible with surface mount technology for straightforward integration
• High-temperature rating of +150 °C maintains performance in challenging environments
• RoHS compliant, promoting eco-friendly design and manufacturing

Applications

• Utilised in microcontroller interfacing for load management
• Suitable for automotive electronics for switch control
• Employed in power supply circuits for efficient current handling
• Ideal for consumer electronics requiring compact power solutions
• Applied in automation systems for consistent control operations

How does the gate threshold voltage affect switching behaviour?

The gate threshold voltage specifies the minimum gate-to-source voltage required to activate the device, influencing its switching speed and operational efficiency.

What considerations should be taken during installation regarding thermal management?

Proper heat dissipation must be ensured as the maximum operating temperature is +150 °C, crucial for sustaining performance and safety.

Can it be integrated with existing circuits designed for other technologies?

Yes, it features an industry-standard pinout, ensuring compatibility with various existing surface mount techniques.

What are the implications of the maximum gate-source voltage rating?

The voltage rating of ±20 V must be observed to avoid gate damage and ensure stable operation within specified limits.

How does this component compare to other switching devices?

It features low Rds(on) characteristics that reduce switching losses, providing advantages over alternative types in terms of efficiency and thermal management.

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	5.3 A
Maximum Drain Source Voltage	30 V
Package Type	SOT-23
Series	HEXFET
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	27 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2.3V
Minimum Gate Threshold Voltage	1.3V
Maximum Power Dissipation	1.3 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Length	3.04mm
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	2.6 nC @ 4.5 V
Transistor Material	Si
Width	1.4mm
Forward Diode Voltage	1V
Height	1.02mm
Minimum Operating Temperature	-55 °C