Infineon HEXFET Type N-Channel MOSFET, 5.3 A, 30 V Enhancement, 3-Pin SOT-23

RS Stock No.:: 913-4042
Mfr. Part No.:: IRLML0030TRPBF
Manufacturer:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 5.3 A, 30 V Enhancement, 3-Pin SOT-23

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Subtotal (1 reel of 3000 units)*

PHP20,694.00

(exc. VAT)

PHP23,178.00

(inc. VAT)

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In Stock

18,000 unit(s) ready to ship from another location

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Units	Per Unit	Per Reel*
3000 - 3000	PHP6.898	PHP20,694.00
6000 - 9000	PHP6.778	PHP20,334.00
12000 - 27000	PHP6.42	PHP19,260.00
30000 - 57000	PHP6.101	PHP18,303.00
60000 +	PHP5.981	PHP17,943.00

*price indicative

RS Stock No.:: 913-4042
Mfr. Part No.:: IRLML0030TRPBF
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	5.3A
	Maximum Drain Source Voltage Vds	30V
	Package Type	SOT-23
	Series	HEXFET
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	27mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	1.3W
	Typical Gate Charge Qg @ Vgs	2.6nC
	Forward Voltage Vf	1V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	3.04mm
	Width	1.4 mm
	Height	1.02mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 5.3A
	Maximum Drain Source Voltage Vds 30V
	Package Type SOT-23
	Series HEXFET
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 27mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 1.3W
	Typical Gate Charge Qg @ Vgs 2.6nC
	Forward Voltage Vf 1V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 3.04mm
	Width 1.4 mm
	Height 1.02mm
	Automotive Standard No

COO (Country of Origin):: PH

Infineon HEXFET Series MOSFET, 5.3A Maximum Continuous Drain Current, 1.3W Maximum Power Dissipation - IRLML0030TRPBF

This MOSFET is designed to deliver efficient switching for electronic circuits across various industrial applications. Its enhancement mode FET configuration ensures optimal performance for load or system switching tasks. As a key component in the automation and electronics sectors, it offers versatility and high dependability, making it a fundamental selection for engineers.

Features & Benefits

• 5.3A continuous drain current extends operational capability

• 30V maximum drain-source voltage supports rigorous applications

• Low Rds(on) of 27 mΩ minimises energy losses during operation

• Compatible with surface mount technology for straightforward integration

• High-temperature rating of +150 °C maintains performance in challenging environments

• RoHS compliant, promoting eco-friendly design and manufacturing

Applications

• Utilised in microcontroller interfacing for load management

• Suitable for automotive electronics for switch control

• Employed in power supply circuits for efficient current handling

• Ideal for consumer electronics requiring compact power solutions

• Applied in automation systems for consistent control operations

How does the gate threshold voltage affect switching behaviour?

The gate threshold voltage specifies the minimum gate-to-source voltage required to activate the device, influencing its switching speed and operational efficiency.

What considerations should be taken during installation regarding thermal management?

Proper heat dissipation must be ensured as the maximum operating temperature is +150 °C, crucial for sustaining performance and safety.

Can it be integrated with existing circuits designed for other technologies?

Yes, it features an industry-standard pinout, ensuring compatibility with various existing surface mount techniques.

What are the implications of the maximum gate-source voltage rating?

The voltage rating of ±20 V must be observed to avoid gate damage and ensure stable operation within specified limits.

N-Channel Power MOSFET 30V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.