Infineon HEXFET Type N-Channel MOSFET, 3.4 A, 30 V Enhancement, 3-Pin SOT-23
- RS Stock No.:
- 913-4070
- Mfr. Part No.:
- IRLML6346TRPBF
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 3000 units)*
PHP19,446.00
(exc. VAT)
PHP21,780.00
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- 3,000 left, ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | PHP6.482 | PHP19,446.00 |
| 6000 - 9000 | PHP6.331 | PHP18,993.00 |
| 12000 - 27000 | PHP5.929 | PHP17,787.00 |
| 30000 - 57000 | PHP5.728 | PHP17,184.00 |
| 60000 + | PHP5.627 | PHP16,881.00 |
*price indicative
- RS Stock No.:
- 913-4070
- Mfr. Part No.:
- IRLML6346TRPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3.4A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | HEXFET | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 80mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 2.9nC | |
| Maximum Power Dissipation Pd | 1.3W | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.4 mm | |
| Height | 1.02mm | |
| Length | 3.04mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3.4A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series HEXFET | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 80mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 2.9nC | ||
Maximum Power Dissipation Pd 1.3W | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Maximum Operating Temperature 150°C | ||
Width 1.4 mm | ||
Height 1.02mm | ||
Length 3.04mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- PH
N-Channel Power MOSFET 30V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon HEXFET Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23 IRLML6346TRPBF
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin SOT-23
- Infineon HEXFET Type N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23
- Infineon HEXFET Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Infineon HEXFET Type N-Channel MOSFET 40 V Enhancement, 3-Pin SOT-23
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23
- Infineon HEXFET Type N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23