Infineon HEXFET Type N-Channel MOSFET, 1.2 A, 60 V Enhancement, 3-Pin SOT-23
- RS Stock No.:
- 913-4058
- Mfr. Part No.:
- IRLML2060TRPBF
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 3000 units)*
PHP14,850.00
(exc. VAT)
PHP16,620.00
(inc. VAT)
FREE delivery for orders over ₱3,000.00
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- 27,000 left, ready to ship from another location
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Units | Per Unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | PHP4.95 | PHP14,850.00 |
| 6000 - 9000 | PHP4.802 | PHP14,406.00 |
| 12000 - 27000 | PHP4.657 | PHP13,971.00 |
| 30000 - 57000 | PHP4.518 | PHP13,554.00 |
| 60000 + | PHP4.382 | PHP13,146.00 |
*price indicative
- RS Stock No.:
- 913-4058
- Mfr. Part No.:
- IRLML2060TRPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 1.2A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | HEXFET | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 480mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.25W | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 0.67nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.04mm | |
| Standards/Approvals | No | |
| Height | 1.02mm | |
| Width | 1.4 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 1.2A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series HEXFET | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 480mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.25W | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 0.67nC | ||
Maximum Operating Temperature 150°C | ||
Length 3.04mm | ||
Standards/Approvals No | ||
Height 1.02mm | ||
Width 1.4 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- PH
N-Channel Power MOSFET 60V to 80V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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