Infineon HEXFET Type N-Channel MOSFET, 1.2 A, 30 V Enhancement, 3-Pin SOT-23 IRLML2803TRPBF

RS Stock No.:: 302-022
Mfr. Part No.:: IRLML2803TRPBF
Manufacturer:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 1.2 A, 30 V Enhancement, 3-Pin SOT-23 IRLML2803TRPBF

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PHP63.21

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PHP70.795

(inc. VAT)

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In Stock

805 unit(s) ready to ship from another location
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Units	Per Unit	Per Pack*
5 - 20	PHP12.642	PHP63.21
25 - 95	PHP11.328	PHP56.64
100 - 245	PHP10.712	PHP53.56
250 - 495	PHP10.24	PHP51.20
500 +	PHP9.998	PHP49.99

*price indicative

RS Stock No.:: 302-022
Mfr. Part No.:: IRLML2803TRPBF
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	1.2A
	Maximum Drain Source Voltage Vds	30V
	Package Type	SOT-23
	Series	HEXFET
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	250mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	540mW
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	3.3nC
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Length	3.04mm
	Standards/Approvals	No
	Width	1.4 mm
	Height	1.02mm
	Distrelec Product Id	304-36-995
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 1.2A
	Maximum Drain Source Voltage Vds 30V
	Package Type SOT-23
	Series HEXFET
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 250mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 540mW
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 3.3nC
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Length 3.04mm
	Standards/Approvals No
	Width 1.4 mm
	Height 1.02mm
	Distrelec Product Id 304-36-995
	Automotive Standard AEC-Q101

Infineon HEXFET Series MOSFET, 1.2A Maximum Continuous Drain Current, 540 mW Maximum Power Dissipation - IRLML2803TRPBF

This N-channel MOSFET delivers enhanced performance and reliability for a range of electronic applications. Designed with Hexfet technology, it operates efficiently in surface mount configurations, making it suitable for compact designs in the automation and electrical sectors. The combination of low RDS(on) and a high continuous drain current supports optimal power management in various conditions.

Features & Benefits

• Supports a maximum continuous drain current of 1.2A for effective performance

• High maximum drain-source voltage of 30V allows for versatile usage

• Low maximum drain-source resistance of 250mΩ minimises power losses

• Enhancement mode operation enables efficient switching capabilities

• Compact SOT-23 package is ideal for space-constrained applications

• Operates at high temperatures, with a maximum operating temperature of +150°C

Applications

• Utilised in DC-DC converters for effective energy management

• Employed in motor control circuits for improved precision

• Suitable for power supply switching in consumer electronics

• Integrated into automation systems for efficient load management

What is the optimal gate voltage for operation?

The optimal gate voltage for this device is +10V, allowing for efficient switching and performance.

How does it perform in high temperatures?

This component can function at temperatures up to +150°C, ensuring reliability in thermal conditions.

Can it handle pulsed drain currents?

Yes, it supports pulsed drain currents significantly above continuous ratings, accommodating short current surges.

What mounting type is recommended for this device?

Surface mount is the recommended type, as it provides better thermal performance and space efficiency in circuit designs.

What precautions should be taken during installation?

Proper thermal management and adherence to maximum ratings are necessary to prevent damage during operation.