Vishay SiR462DP Type N-Channel MOSFET, 19 A, 30 V Enhancement, 8-Pin SO-8 SIR462DP-T1-GE3
- RS Stock No.:
- 710-3402
- Mfr. Part No.:
- SIR462DP-T1-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
PHP277.40
(exc. VAT)
PHP310.70
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 1,930 unit(s) ready to ship from another location
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Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 20 | PHP55.48 | PHP277.40 |
| 25 - 45 | PHP54.368 | PHP271.84 |
| 50 - 245 | PHP53.282 | PHP266.41 |
| 250 - 495 | PHP52.218 | PHP261.09 |
| 500 + | PHP51.176 | PHP255.88 |
*price indicative
- RS Stock No.:
- 710-3402
- Mfr. Part No.:
- SIR462DP-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 19A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SO-8 | |
| Series | SiR462DP | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 8mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 20nC | |
| Forward Voltage Vf | 0.8V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 4.8W | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.04mm | |
| Width | 5.89 mm | |
| Standards/Approvals | No | |
| Length | 4.9mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 19A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SO-8 | ||
Series SiR462DP | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 8mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 20nC | ||
Forward Voltage Vf 0.8V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 4.8W | ||
Maximum Operating Temperature 150°C | ||
Height 1.04mm | ||
Width 5.89 mm | ||
Standards/Approvals No | ||
Length 4.9mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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