Vishay TrenchFET Type N-Channel MOSFET, 19 A, 40 V Enhancement, 8-Pin SOIC SI4840BDY-T1-GE3
- RS Stock No.:
- 710-4736
- Mfr. Part No.:
- SI4840BDY-T1-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
PHP434.83
(exc. VAT)
PHP487.01
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- 3,770 unit(s) shipping from January 02, 2026
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Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 20 | PHP86.966 | PHP434.83 |
| 25 - 95 | PHP84.354 | PHP421.77 |
| 100 - 245 | PHP81.824 | PHP409.12 |
| 250 - 495 | PHP79.37 | PHP396.85 |
| 500 + | PHP76.99 | PHP384.95 |
*price indicative
- RS Stock No.:
- 710-4736
- Mfr. Part No.:
- SI4840BDY-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 19A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SOIC | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.012Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 6W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 33nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Width | 4 mm | |
| Height | 1.55mm | |
| Length | 5mm | |
| Standards/Approvals | RoHS, JEDEC JS709A, Halogen Free (IEC 61249-2-21) | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 19A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SOIC | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.012Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 6W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 33nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Width 4 mm | ||
Height 1.55mm | ||
Length 5mm | ||
Standards/Approvals RoHS, JEDEC JS709A, Halogen Free (IEC 61249-2-21) | ||
Automotive Standard No | ||
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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