Vishay TrenchFET N channel-Channel MOSFET, 14 A, 60 V Enhancement, 8-Pin PowerPAK SI7120BDN-T1-GE3

N
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Subtotal (1 tape of 1 unit)*

PHP31.35

(exc. VAT)

PHP35.11

(inc. VAT)

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1 - 24PHP31.35
25 - 99PHP20.28
100 +PHP11.99

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RS Stock No.:
904-972
Mfr. Part No.:
SI7120BDN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

N channel

Product Type

MOSFET

Maximum Continuous Drain Current Id

14A

Maximum Drain Source Voltage Vds

60V

Package Type

PowerPAK

Series

TrenchFET

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

0.021Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

19.8W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20V

Typical Gate Charge Qg @ Vgs

4.3nC

Forward Voltage Vf

1.1V

Maximum Operating Temperature

150°C

Length

3.3mm

Width

3.3mm

Standards/Approvals

ROHS

Automotive Standard

No

COO (Country of Origin):
IL
The Vishay N-Channel MOSFET designed for efficient power management, providing enhanced performance in various electronic applications through Advanced features and robust reliability.

TrenchFET Gen IV technology optimises efficiency and reduces power loss

100% tested for R and UIS, ensuring consistent reliability

Lead (Pb)-free construction adheres to environmental standards

Optimised switching characteristics support high-speed applications

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