Vishay TrenchFET N-Channel MOSFET, 14 A, 60 V Enhancement, 8-Pin PowerPAK SI7120BDN-T1-GE3
- RS Stock No.:
- 904-972
- Mfr. Part No.:
- SI7120BDN-T1-GE3
- Manufacturer:
- Vishay
N
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Tape(s) | Per Tape |
|---|---|
| 1 - 24 | PHP31.35 |
| 25 - 99 | PHP20.28 |
| 100 + | PHP11.99 |
*price indicative
- RS Stock No.:
- 904-972
- Mfr. Part No.:
- SI7120BDN-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 14A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PowerPAK | |
| Series | TrenchFET | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.021Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 4.3nC | |
| Maximum Power Dissipation Pd | 19.8W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.3mm | |
| Standards/Approvals | ROHS | |
| Width | 3.3mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 14A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PowerPAK | ||
Series TrenchFET | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.021Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 4.3nC | ||
Maximum Power Dissipation Pd 19.8W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 150°C | ||
Length 3.3mm | ||
Standards/Approvals ROHS | ||
Width 3.3mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- IL
The Vishay N-Channel MOSFET designed for efficient power management, providing enhanced performance in various electronic applications through Advanced features and robust reliability.
TrenchFET Gen IV technology optimises efficiency and reduces power loss
100% tested for R and UIS, ensuring consistent reliability
Lead (Pb)-free construction adheres to environmental standards
Optimised switching characteristics support high-speed applications
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