Vishay TrenchFET Type N-Channel MOSFET, 30 A, 30 V Enhancement, 8-Pin PowerPAK 1212 SISA10DN-T1-GE3

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Subtotal (1 pack of 10 units)*

PHP469.66

(exc. VAT)

PHP526.02

(inc. VAT)

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Units
Per Unit
Per Pack*
10 - 10PHP46.966PHP469.66
20 - 90PHP45.557PHP455.57
100 - 190PHP44.191PHP441.91
200 - 390PHP42.866PHP428.66
400 +PHP41.581PHP415.81

*price indicative

Packaging Options:
RS Stock No.:
787-9409
Mfr. Part No.:
SISA10DN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

30A

Maximum Drain Source Voltage Vds

30V

Series

TrenchFET

Package Type

PowerPAK 1212

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

5mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

0.8V

Typical Gate Charge Qg @ Vgs

34nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

39W

Maximum Operating Temperature

150°C

Width

3.4 mm

Standards/Approvals

No

Height

1.12mm

Length

3.4mm

Automotive Standard

No

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