Vishay TrenchFET Type N-Channel MOSFET, 40 A, 30 V Enhancement, 8-Pin PowerPAK 1212 SISA04DN-T1-GE3

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Subtotal (1 bag of 2 units)*

PHP130.72

(exc. VAT)

PHP146.40

(inc. VAT)

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Units
Per Unit
Per Bag*
2 - 18PHP65.36PHP130.72
20 - 38PHP63.405PHP126.81
40 - 98PHP61.50PHP123.00
100 - 498PHP59.65PHP119.30
500 +PHP57.87PHP115.74

*price indicative

Packaging Options:
RS Stock No.:
768-9307
Mfr. Part No.:
SISA04DN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

40A

Maximum Drain Source Voltage Vds

30V

Series

TrenchFET

Package Type

PowerPAK 1212

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

3.1mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

0.73V

Typical Gate Charge Qg @ Vgs

51nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

52W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

3.15mm

Width

3.15 mm

Height

1.12mm

Automotive Standard

No

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor


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