Vishay TrenchFET Type N-Channel MOSFET, 40 A, 30 V Enhancement, 8-Pin PowerPAK 1212 SISA04DN-T1-GE3

Bulk discount available

Subtotal (1 bag of 2 units)*

PHP169.94

(exc. VAT)

PHP190.34

(inc. VAT)

Add to Basket
Select or type quantity
Stock information currently inaccessible - Please check back later

Units
Per Unit
Per Bag*
2 - 18PHP84.97PHP169.94
20 - 38PHP82.43PHP164.86
40 - 98PHP79.955PHP159.91
100 - 498PHP77.55PHP155.10
500 +PHP75.235PHP150.47

*price indicative

Packaging Options:
RS Stock No.:
768-9307
Mfr. Part No.:
SISA04DN-T1-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

40A

Maximum Drain Source Voltage Vds

30V

Package Type

PowerPAK 1212

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

3.1mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

51nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

52W

Forward Voltage Vf

0.73V

Maximum Operating Temperature

150°C

Length

3.15mm

Standards/Approvals

No

Height

1.12mm

Automotive Standard

No

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


Related links