Vishay TrenchFET Type N-Channel MOSFET, 30 A, 30 V Enhancement, 8-Pin PowerPAK 1212

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Subtotal (1 reel of 3000 units)*

PHP89,106.00

(exc. VAT)

PHP99,798.00

(inc. VAT)

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Units
Per Unit
Per Reel*
3000 +PHP29.702PHP89,106.00

*price indicative

RS Stock No.:
165-7077
Mfr. Part No.:
SISA10DN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

30A

Maximum Drain Source Voltage Vds

30V

Package Type

PowerPAK 1212

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

5mΩ

Channel Mode

Enhancement

Forward Voltage Vf

0.8V

Typical Gate Charge Qg @ Vgs

34nC

Maximum Power Dissipation Pd

39W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

3.4mm

Standards/Approvals

No

Height

1.12mm

Automotive Standard

No

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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