Vishay SIHK Type N-Channel MOSFET, 19 A, 600 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK155N60E-T1-GE3

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Subtotal (1 reel of 2000 units)*

PHP580,356.00

(exc. VAT)

PHP649,998.00

(inc. VAT)

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Units
Per Unit
Per Reel*
2000 +PHP290.178PHP580,356.00

*price indicative

RS Stock No.:
279-9919
Mfr. Part No.:
SIHK155N60E-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

19A

Maximum Drain Source Voltage Vds

600V

Series

SIHK

Package Type

PowerPAK 10 x 12

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.158Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±30 V

Maximum Power Dissipation Pd

156W

Typical Gate Charge Qg @ Vgs

36nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Length

9.9mm

Standards/Approvals

RoHS

Automotive Standard

No

The Vishay MOSFET is a E series power MOSFET and the transistor in it is made up of material known as silicon.

4th generation E series technology

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance

Avalanche energy rated

Reduced switching and conduction losses

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