Vishay SIHK Type N-Channel MOSFET, 19 A, 600 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK155N60E-T1-GE3

RS Stock No.:: 279-9919
Mfr. Part No.:: SIHK155N60E-T1-GE3
Manufacturer:: Vishay

Vishay SIHK Type N-Channel MOSFET, 19 A, 600 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK155N60E-T1-GE3

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Subtotal (1 reel of 2000 units)*

PHP580,356.00

(exc. VAT)

PHP649,998.00

(inc. VAT)

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In Stock

Plus 2,000 unit(s) shipping from August 10, 2026

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Units	Per Unit	Per Reel*
2000 +	PHP290.178	PHP580,356.00

*price indicative

RS Stock No.:: 279-9919
Mfr. Part No.:: SIHK155N60E-T1-GE3
Manufacturer:: Vishay

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	19A
	Maximum Drain Source Voltage Vds	600V
	Series	SIHK
	Package Type	PowerPAK 10 x 12
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.158Ω
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	156W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	36nC
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	30V
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Length	9.9mm
	Automotive Standard	No

	Select all
	Brand Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 19A
	Maximum Drain Source Voltage Vds 600V
	Series SIHK
	Package Type PowerPAK 10 x 12
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.158Ω
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 156W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 36nC
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 30V
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Length 9.9mm
	Automotive Standard No

Datasheet - SIHK155N60E-T1-GE3

Vishay SIHK Series MOSFET, 600V Drain Source Voltage, 19A Continuous Drain Current - SIHK155N60E-T1-GE3

This MOSFET is a high-voltage, N-channel switching transistor designed for surface-mount power applications. It operates in enhancement mode and is suitable for electronic systems requiring substantial drain current and elevated power handling across a wide temperature range. The device is intended for mounting in a compact PowerPAK 10x12 package and conforms to RoHS requirements.

Features and Benefits:

• 600V rating enables use in high-voltage power stages
• 19A continuous drain current supports sustained load currents
• 156W maximum power dissipation manages heavy switching duty
• 0.158Ω low Rds(on) reduces conduction losses
• 36nC typical gate charge facilitates predictable switching performance
• 30V maximum gate drive permits standard logic-level gate control

Applications

• Suitable for SMPS primary-side switching in power supplies
• Ideal for industrial motor drive inverter stages
• Used for high-voltage DC-DC conversion modules
• Can be used for quasi-relays and solid-state switching arrays
• Suitable for telecoms and industrial power distribution equipment

What thermal range can it withstand in demanding installations?

It is specified to operate from -55°C up to 150°C, allowing deployment in harsh industrial environments.

What mounting considerations are relevant for thermal management?

The surface-mount PowerPAK 10x12 format permits close heatsinking and low thermal-resistance PCB layouts when paired with appropriate copper pour and vias.

How many pins are present and how does that affect PCB layout?

The device uses an 8-pin configuration, enabling dedicated drain, source and gate connections for compact high-current routing.

What is the typical forward voltage and where is it relevant?

The forward voltage is 1.2V, which is pertinent for body-diode conduction scenarios and reverse-recovery performance during switching transients.