Vishay SIHK Type N-Channel MOSFET, 19 A, 600 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK155N60E-T1-GE3

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Subtotal (1 unit)*

PHP316.74

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PHP354.75

(inc. VAT)

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Per Unit
1 - 49PHP316.74
50 - 99PHP310.48
100 - 249PHP304.24
250 - 999PHP297.98
1000 +PHP291.74

*price indicative

Packaging Options:
RS Stock No.:
279-9920
Mfr. Part No.:
SIHK155N60E-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

19A

Maximum Drain Source Voltage Vds

600V

Package Type

PowerPAK 10 x 12

Series

SIHK

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.158Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

36nC

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

±30 V

Maximum Power Dissipation Pd

156W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

9.9mm

Standards/Approvals

RoHS

Automotive Standard

No

The Vishay MOSFET is a E series power MOSFET and the transistor in it is made up of material known as silicon.

4th generation E series technology

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance

Avalanche energy rated

Reduced switching and conduction losses

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