Vishay SIHK Type N-Channel MOSFET, 24 A, 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK105N60EF-T1GE3
- RS Stock No.:
- 268-8309
- Mfr. Part No.:
- SIHK105N60EF-T1GE3
- Manufacturer:
- Vishay
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Units | Per Unit | Per Pack* |
|---|---|---|
| 2 - 48 | PHP411.74 | PHP823.48 |
| 50 - 98 | PHP399.39 | PHP798.78 |
| 100 - 248 | PHP375.425 | PHP750.85 |
| 250 - 998 | PHP341.65 | PHP683.30 |
| 1000 + | PHP300.66 | PHP601.32 |
*price indicative
- RS Stock No.:
- 268-8309
- Mfr. Part No.:
- SIHK105N60EF-T1GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 24A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PowerPAK 10 x 12 | |
| Series | SIHK | |
| Mount Type | PCB | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.105Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 51nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 142W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Operating Temperature | 150°C | |
| Length | 9.9mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 24A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PowerPAK 10 x 12 | ||
Series SIHK | ||
Mount Type PCB | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.105Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 51nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 142W | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Operating Temperature 150°C | ||
Length 9.9mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay SIHK Series MOSFET, 650V Maximum Drain Source Voltage, 24A Maximum Continuous Drain Current - SIHK105N60EF-T1GE3
This MOSFET is a high-voltage N-channel enhancement device designed for power switching in demanding PCB-mounted systems. It operates across a wide temperature range and is intended for applications requiring substantial drain current and elevated blocking voltage while conforming to RoHS environmental standards.
Features and Benefits:
• 650V drain rating enables high-voltage switching capability
• 24A continuous drain current supports heavy-load operation
• 0.105Ω Rds(on) reduces conduction losses under load
• 142W power dissipation allows high-power handling
• 51nC typical gate charge minimises switching energy losses
• 30V gate rating permits wide gate-drive flexibility
• 24A continuous drain current supports heavy-load operation
• 0.105Ω Rds(on) reduces conduction losses under load
• 142W power dissipation allows high-power handling
• 51nC typical gate charge minimises switching energy losses
• 30V gate rating permits wide gate-drive flexibility
Applications
• Suitable for industrial power converters and inverters
• Ideal for high-voltage motor-drive front ends
• Used with switch-mode power supplies for energy-efficient switching
• Can be used for solid-state relays and protection circuits
• Suitable for telecom power distribution modules
• Ideal for high-voltage motor-drive front ends
• Used with switch-mode power supplies for energy-efficient switching
• Can be used for solid-state relays and protection circuits
• Suitable for telecom power distribution modules
What package format does this device use for PCB assembly?
It is supplied in a PowerPAK 10x12 package intended for surface-mount PCB attachment, providing a compact footprint and thermal relief for high-power layouts.
How does the device cope with extreme ambient temperatures?
The device is specified to operate from -55°C up to 150°C, covering wide industrial thermal conditions without derating below those limits.
What gate-drive considerations should be observed for reliable operation?
Gate excursions must be limited to a maximum of 30V to prevent gate oxide stress
appropriate gate resistances and drive circuitry are recommended to manage the 51nC charge during switching.
Is this device suitable for automotive qualification?
It is not designated as automotive-grade, so it should not be assumed to meet automotive-specific qualification requirements.
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