Vishay Si4116DY Type N-Channel MOSFET, 12.7 A, 25 V Enhancement, 8-Pin SOIC SI4116DY-T1-GE3
- RS Stock No.:
- 710-3317
- Mfr. Part No.:
- SI4116DY-T1-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
PHP414.96
(exc. VAT)
PHP464.755
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Last RS stock
- Final 2,410 unit(s), ready to ship from another location
Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 20 | PHP82.992 | PHP414.96 |
| 25 - 95 | PHP78.328 | PHP391.64 |
| 100 - 245 | PHP74.148 | PHP370.74 |
| 250 - 495 | PHP73.50 | PHP367.50 |
| 500 + | PHP72.696 | PHP363.48 |
*price indicative
- RS Stock No.:
- 710-3317
- Mfr. Part No.:
- SI4116DY-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 12.7A | |
| Maximum Drain Source Voltage Vds | 25V | |
| Package Type | SOIC | |
| Series | Si4116DY | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 9mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Maximum Power Dissipation Pd | 2.5W | |
| Typical Gate Charge Qg @ Vgs | 37nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 5mm | |
| Width | 4 mm | |
| Height | 1.55mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 12.7A | ||
Maximum Drain Source Voltage Vds 25V | ||
Package Type SOIC | ||
Series Si4116DY | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 9mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Maximum Power Dissipation Pd 2.5W | ||
Typical Gate Charge Qg @ Vgs 37nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 5mm | ||
Width 4 mm | ||
Height 1.55mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, 8V to 25V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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