Vishay ThunderFET Type N-Channel MOSFET, 20 A, 100 V Enhancement, 8-Pin SOIC SI4090DY-T1-GE3
- RS Stock No.:
- 787-9131
- Mfr. Part No.:
- SI4090DY-T1-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
PHP489.06
(exc. VAT)
PHP547.745
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 2,485 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 20 | PHP97.812 | PHP489.06 |
| 25 - 95 | PHP94.882 | PHP474.41 |
| 100 - 245 | PHP92.034 | PHP460.17 |
| 250 - 495 | PHP89.276 | PHP446.38 |
| 500 + | PHP86.598 | PHP432.99 |
*price indicative
- RS Stock No.:
- 787-9131
- Mfr. Part No.:
- SI4090DY-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | ThunderFET | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 12mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 45.6nC | |
| Maximum Power Dissipation Pd | 7.8W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 150°C | |
| Width | 4 mm | |
| Height | 1.5mm | |
| Length | 5mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series ThunderFET | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 12mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 45.6nC | ||
Maximum Power Dissipation Pd 7.8W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 150°C | ||
Width 4 mm | ||
Height 1.5mm | ||
Length 5mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-Channel MOSFET, Medium Voltage/ThunderFET®, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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