Vishay SIRS Type P-Channel MOSFET, 227 A, 30 V Enhancement, 8-Pin SO-8 SIRS4301DP-T1-GE3

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Subtotal (1 pack of 2 units)*

PHP460.66

(exc. VAT)

PHP515.94

(inc. VAT)

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  • 5,950 unit(s) ready to ship from another location
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Units
Per Unit
Per Pack*
2 - 48PHP230.33PHP460.66
50 - 98PHP225.97PHP451.94
100 - 248PHP208.525PHP417.05
250 - 998PHP204.165PHP408.33
1000 +PHP199.805PHP399.61

*price indicative

Packaging Options:
RS Stock No.:
279-9961
Mfr. Part No.:
SIRS4301DP-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

227A

Maximum Drain Source Voltage Vds

30V

Package Type

SO-8

Series

SIRS

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0015Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

132W

Maximum Gate Source Voltage Vgs

±20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

548nC

Maximum Operating Temperature

150°C

Length

5mm

Standards/Approvals

RoHS

Automotive Standard

No

The Vishay MOSFET is a P-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

100 percent Rg and UIS tested

Enhance power dissipation and lower RthJC

Fully lead (Pb)-free device

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