Vishay SIRS Type N-Channel MOSFET, 478 A, 30 V Enhancement, 8-Pin SO-8 SIRS4302DP-T1-GE3

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Subtotal (1 reel of 3000 units)*

PHP411,927.00

(exc. VAT)

PHP461,358.00

(inc. VAT)

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Units
Per Unit
Per Reel*
3000 +PHP137.309PHP411,927.00

*price indicative

RS Stock No.:
279-9962
Mfr. Part No.:
SIRS4302DP-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

478A

Maximum Drain Source Voltage Vds

30V

Package Type

SO-8

Series

SIRS

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.00057Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±20 V

Typical Gate Charge Qg @ Vgs

230nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

208W

Maximum Operating Temperature

150°C

Length

5mm

Standards/Approvals

RoHS

Automotive Standard

No

The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

Fully lead (Pb)-free device

Very low RDS x Qg figure of merit

100 percent Rg and UIS tested

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