Vishay SIRS Type P-Channel MOSFET, 198 A, 40 V Enhancement, 8-Pin SO-8 SIRS4401DP-T1-GE3

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Subtotal (1 pack of 2 units)*

PHP435.12

(exc. VAT)

PHP487.34

(inc. VAT)

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  • 5,998 unit(s) shipping from December 29, 2025
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Units
Per Unit
Per Pack*
2 - 48PHP217.56PHP435.12
50 - 98PHP213.225PHP426.45
100 - 248PHP195.025PHP390.05
250 - 998PHP191.55PHP383.10
1000 +PHP188.075PHP376.15

*price indicative

Packaging Options:
RS Stock No.:
279-9967
Mfr. Part No.:
SIRS4401DP-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

198A

Maximum Drain Source Voltage Vds

40V

Package Type

SO-8

Series

SIRS

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0022Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

588nC

Maximum Power Dissipation Pd

132W

Maximum Gate Source Voltage Vgs

±20 V

Maximum Operating Temperature

150°C

Length

5mm

Standards/Approvals

RoHS

Automotive Standard

No

The Vishay MOSFET is a P-Channel MOSFET and the transistor in it is made up of material known as silicon.

New generation power MOSFET

100 percent Rg and UIS tested

Ultra low RDS x Qg FOM product

Fully lead (Pb)-free device

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