Vishay SiS N channel-Channel MOSFET, 198 A, 30 V Enhancement, 8-Pin PowerPAK 1212 SiSD5300DN
- RS Stock No.:
- 735-152
- Mfr. Part No.:
- SiSD5300DN
- Manufacturer:
- Vishay
N
Bulk discount available
Subtotal (1 unit)*
PHP131.36
(exc. VAT)
PHP147.12
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- Shipping from March 01, 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit |
|---|---|
| 1 - 9 | PHP131.36 |
| 10 - 24 | PHP85.25 |
| 25 - 99 | PHP44.37 |
| 100 - 499 | PHP43.50 |
| 500 + | PHP42.63 |
*price indicative
- RS Stock No.:
- 735-152
- Mfr. Part No.:
- SiSD5300DN
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 198A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerPAK 1212 | |
| Series | SiS | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.00087Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 16V | |
| Forward Voltage Vf | 30V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 59nC | |
| Maximum Power Dissipation Pd | 57W | |
| Maximum Operating Temperature | 150°C | |
| Height | 1mm | |
| Width | 4mm | |
| Standards/Approvals | RoHS | |
| Length | 4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 198A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerPAK 1212 | ||
Series SiS | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.00087Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 16V | ||
Forward Voltage Vf 30V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 59nC | ||
Maximum Power Dissipation Pd 57W | ||
Maximum Operating Temperature 150°C | ||
Height 1mm | ||
Width 4mm | ||
Standards/Approvals RoHS | ||
Length 4mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- IL
The Vishay N-Channel MOSFET rated for 60V drain-source voltage, optimized for high-efficiency switching in AI power server DC/DC converters and synchronous rectification circuits. It achieves very low on-resistance of 1.7mΩ maximum at 10V gate drive for minimal conduction losses in high-current applications
94A continuous drain current at TA=25°C
54.3nC typical total gate charge for fast switching
-55°C to +175°C extended junction temperature range
Related links
- Vishay SiS N channel-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK 1212 SiSD4604LDN
- Vishay SiS N channel-Channel MOSFET 100 V Enhancement, 8-Pin PowerPAK 1212 SiSD5110DN
- Vishay SiS N channel-Channel MOSFET 80 V Enhancement, 8-Pin PowerPAK 1212 SiSD5806DN
- Vishay SISD Type N-Channel MOSFET 30 V Enhancement, 8-Pin 1212-F SISD5300DN-T1-GE3
- Vishay SIS Type N-Channel MOSFET 100 V Enhancement, 8-Pin PowerPAK 1212-8 SIS112LDN-T1-GE3
- Vishay SIS Type N-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK 1212-8S SISS66DN-T1-GE3
- Vishay SIS Type N-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK 1212-8 SIS184LDN-T1-GE3
- Vishay SIS Type N-Channel MOSFET 30 V, 8-Pin PowerPAK 1212-8PT SiSA12BDN-T1-GE3